Dark current is a critical index for Hg1-xCdxTe IRFPA(Infrared focal plane array) detectors, which is main limit for the application in the very long wave(≥12μm) spectral range. In this paper we reduced the dark current by using small pixel effective areas. And by fabricating in-situ integrated microlens on the illumination side of the detector, the disadvantage of the small pixel effective areas has been overcome.
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