Mr. Ulrich Hofmann Profile

Ulrich Hofmann

Founder/General Manager at GenISys GmbH

SPIE Involvement:

Author

Area of Expertise:

Lithography , Data Preparation , Simulation , E-Beam Lithography , Proximity Effect Correction , Startups

Websites:

Company Website

Publications (17)

SPIE Journal Paper | 20 May 2024 Open Access

Open Access

Universal approach for process optimization of chemically amplified photoresists in electron beam lithography

Markus Greul, Astrit Shoshi, Jan Klikovits, Stephan Martens, Ulrich Hofmann, Olga Barahona, Benyamin Shnirman, Leon Starz, Patrick Wintrich, Holger Sailer

JM3, Vol. 23, Issue 02, 024601, (May 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.2.024601

KEYWORDS: Photoresist materials, Photoresist developing, Critical dimension metrology, Photoresist processing, Electron beam lithography, Semiconducting wafers, Lithography, Standards development, Point spread functions, Monte Carlo methods

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Proceedings Article | 16 September 2022 Paper

Paper

Simulation-based verification for MPC corrected mask designs

Nezih Unal, John Duff, Michael Krueger, Ulrich Hofmann, Dmitri Titko

Proceedings Volume 12325, 123250N (2022) https://doi.org/10.1117/12.2640513

KEYWORDS: Dynamic signature verification, Photomasks, Calibration, Lithography, Process modeling, Model-based design, Data modeling, Performance modeling

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Proceedings Article | 12 October 2021 Presentation + Paper

Presentation + Paper

3D-MC modelling of particle contamination induced defects in ebeam mask writing

Jan Klikovits, Robert Polster, Ulrich Hofmann, Axel Feicke, Timo Wandel

Proceedings Volume 11855, 1185503 (2021) https://doi.org/10.1117/12.2600956

KEYWORDS: Electrons, Copper, Scattering, Monte Carlo methods, Polymethylmethacrylate, Particles, Particle contamination, Photomasks, Electron beam lithography

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Proceedings Article | 23 August 2021 Paper

Paper

Novel method to find the best process point in e-beam mask making

Ulrich Hofmann, Holger Sailer, Stephan Martens, Nezih Unal

Proceedings Volume 11908, 119080M (2021) https://doi.org/10.1117/12.2604372

KEYWORDS: Calibration, Etching, Point spread functions, Data modeling, Photomasks, Electron beam lithography, Backscatter, Mask making

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Proceedings Article | 24 March 2020 Presentation

Presentation

Software-based optimization methods for the ULTRA semiconductor maskwriter (Conference Presentation)

Niels Wijnaendts van Resandt, Ulrich Hofmann

Proceedings Volume 11324, 113240O (2020) https://doi.org/10.1117/12.2552378

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Proceedings Article | 31 March 2014 Paper

Paper

Lithographic process window optimization for mask aligner proximity lithography

Reinhard Voelkel, Uwe Vogler, Arianna Bramati, Andreas Erdmann, Nezih Ünal, Ulrich Hofmann, Marc Hennemeyer, Ralph Zoberbier, David Nguyen, Juergen Brugger

Proceedings Volume 9052, 90520G (2014) https://doi.org/10.1117/12.2046332

KEYWORDS: Lithography, Photomasks, Lithographic illumination, Critical dimension metrology, Photoresist materials, Tolerancing, Molybdenum, Diffraction, Silicon, Photoresist developing

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Proceedings Article | 26 March 2013 Paper

Paper

Contrast enhanced exposure strategy in multi-beam mask writing

Nikola Belic, Ulrich Hofmann, Jan Klikovits, Stephan Martens

Proceedings Volume 8680, 86802A (2013) https://doi.org/10.1117/12.2014148

KEYWORDS: Critical dimension metrology, Point spread functions, Photomasks, Monte Carlo methods, Standards development, Beam shaping, Model-based design, Opacity, Modulation, Extreme ultraviolet lithography

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Proceedings Article | 20 October 2006 Paper

Paper

Mask repair using layout-based pattern copy for the 65-nm node and beyond

Volker Boegli, Nicole Auth, Uli Hofmann

Proceedings Volume 6349, 63491G (2006) https://doi.org/10.1117/12.686404

KEYWORDS: Databases, Image processing, Critical dimension metrology, Magnesium, Image resolution, Standards development, Line edge roughness, Image acquisition, Data conversion, Etching

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Proceedings Article | 6 December 2004 Paper

Paper

E-beam lithography experimental results and simulation for the 45-nm node

John Nistler, Chia-Jen Chen, Sergey Vychub, Hsin-Chang Lee, Lee-Chih Yeh, Hung-Chang Hsieh, Christoph Sambale, Ulrich Hofmann

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570022

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Monte Carlo methods, Oxides, Error analysis, Mask making, Etching

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Proceedings Article | 17 December 2003 Paper

Paper

Toward large-area simulation of e-beam lithography

Martin Bohn, Ulrich Hofmann, Wolfgang Hoppe, Christopher Progler, Michael Ryzhoukhin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.520812

KEYWORDS: Optical proximity correction, Electron beam lithography, Monte Carlo methods, Photomasks, Mathematical modeling, Mask making, Lithography, Computer simulations, Optical lithography, Algorithm development

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Proceedings Article | 19 July 2000 Paper

Paper

Elements of an advanced pattern generator for 130- to 100-nm maskmaking

Varoujan Chakarian, Charles Sauer, Bassam Shamoun, Frank Chilese, David Trost, Marek Zywno, Ulrich Hofmann, Robin Teitzel, Richard Prior, Frederick Raymond, Abe Ghanbari, Frank Abboud

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392094

KEYWORDS: Photomasks, Lithography, Control systems, Electron beam lithography, Critical dimension metrology, Raster graphics, Reticles, Binary data, Line edge roughness, RGB color model

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Proceedings Article | 30 December 1999 Paper

Paper

Extension of graybeam writing for the 130-nm technology node

Jan Chabala, Frank Abboud, Charles Sauer, Suzanne Weaver, Maiying Lu, Henry Pearce-Percy, Ulrich Hofmann, Matthew Vernon, Dinh Ton, Damon Cole, Robert Naber

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373345

KEYWORDS: Lithography, Photomasks, Printing, Critical dimension metrology, Scattering, Metrology, Dry etching, Etching, Charged particle optics, Error analysis

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Proceedings Article | 30 December 1999 Paper

Paper

System architecture choices for an advanced mask writer (100 to 130 nm)

Varoujan Chakarian, Frederick Raymond, Charles Sauer, Sergey Babin, Robert Innes, Allan Sagle, Ulrich Hofmann, Bassam Shamoun, David Trost, Abe Ghanbari, Frank Abboud

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373318

KEYWORDS: Vestigial sideband modulation, Photomasks, Raster graphics, Lithography, Electron beam lithography, Optical proximity correction, Control systems, RGB color model, Photoresist processing, Reticles

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Proceedings Article | 25 June 1999 Paper

Paper

Lithographic analysis of multipass gray writing strategy for electron-beam pattern generation

Jan Chabala, Frank Abboud, Robert Dean, Suzanne Weaver, Damon Cole, Charles Sauer, Frederick Raymond, Ulrich Hofmann

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351081

KEYWORDS: Printing, Lithography, Photomasks, Monte Carlo methods, Line edge roughness, Computer aided design, Scattering, Dry etching, Etching, Critical dimension metrology

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Proceedings Article | 28 July 1997 Paper

Paper

Multipass gray printing for the new MEBES 4500S mask lithography system

Frank Abboud, Robert Dean, Janine Doering, W. Eckes, Mark Gesley, Ulrich Hofmann, Terry Mulera, Robert Naber, M. Pastor, Wayne Phillips, John Raphael, Frederick Raymond, Charles Sauer

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277295

KEYWORDS: Printing, Control systems, Photomasks, Lithography, Electron beam lithography, Reticles, Temperature metrology, Laser scattering, Scattering, Modulation

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Proceedings Article | 27 May 1996 Paper

Paper

Hierarchical e-beam proximity correction in mask making

Ulrich Hofmann, Christian Kalus, Anja Rosenbusch, Rik Jonckheere, Andrew Hourd

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240465

KEYWORDS: Photomasks, Mask making, Optical proximity correction, Computer aided design, Raster graphics, Wafer-level optics, Reticles, Scattering, Optical calibration, Fractal analysis

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Proceedings Article | 8 December 1995 Paper

Paper

Hierarchical proximity correction using CAPROX

Ulrich Hofmann, Christian Kalus, Anja Rosenbusch, Hiroyuki Endo, Yasuki Kimura, Akihiro Endo

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228210

KEYWORDS: Scattering, Optical proximity correction, Electrons, Algorithm development, Data processing, Computer aided design, Optical spheres, Electron beam lithography, Scanning electron microscopy, Data corrections

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Showing 5 of 17 publications

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