Wafer level analysis and simulation of back end of line chemical mechanical polishing processes

Ushasree Katakamsetty; Stefan Nikolaev Voykov; Sascha Bott; Sam Nakagawa; Tamba Tugbawa; Aaron Gower-Hall; Brian Lee; Jansen Chee; Henry Geng; Weiyang Zhu; Bifeng Li; Kimiko Ichikawa

doi:10.1117/12.2616078

26 May 2022 Wafer level analysis and simulation of back end of line chemical mechanical polishing processes

Ushasree Katakamsetty, Stefan Nikolaev Voykov, Sascha Bott, Sam Nakagawa, Tamba Tugbawa, Aaron Gower-Hall, Brian Lee, Jansen Chee, Henry Geng, Weiyang Zhu, Bifeng Li, Kimiko Ichikawa

Author Affiliations +

Proceedings Volume 12052, DTCO and Computational Patterning; 1205212 (2022) https://doi.org/10.1117/12.2616078
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

The Chemical Mechanical Polishing (CMP) variation on a die is a function of the die’s location on the wafer. For example, the post CMP thickness and/or topography variations in the center die can be very different from those in the mid-radius and edge dies. Consequently, the number of CMP hotspots and the hotspot locations can vary from die-to-die on a given wafer. Most commercial CMP simulation tools in the Design for Manufacturing (DFM) field focus on predicting CMP topography and thicknesses for a single die on the patterned wafer, and do not have wafer level prediction capabilities. For CMP simulation to be more effective in process and layout optimization, CMP simulation tools should be able to accurately predict CMP performance at the feature-scale, within the die, and across the entire wafer. In this paper, we analyze CMP data from multiple dies on back end of line (BEOL) Cu interconnect levels and show the wafer level effects in a polishing process. We use the data to calibrate Cadence’s integrated wafer level and die level CMP models and use the calibrated models to predict the CMP pattern dependencies on multiple dies across a product chip wafer. Finally, we show a comparison of the simulation to measured data.

Conference Presentation

Citation Download Citation

Ushasree Katakamsetty, Stefan Nikolaev Voykov, Sascha Bott, Sam Nakagawa, Tamba Tugbawa, Aaron Gower-Hall, Brian Lee, Jansen Chee, Henry Geng, Weiyang Zhu, Bifeng Li, and Kimiko Ichikawa "Wafer level analysis and simulation of back end of line chemical mechanical polishing processes", Proc. SPIE 12052, DTCO and Computational Patterning, 1205212 (26 May 2022); https://doi.org/10.1117/12.2616078

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available