Kjetil Gjerde, Jakob Kjelstrup-Hansen, Lauge Gammelgaard, Peter Bøggild
Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 6, Issue 04, 043014, (October 2007) https://doi.org/10.1117/1.2811948
TOPICS: Nickel, Etching, Photomasks, Electron beam lithography, Semiconducting wafers, Silicon, Lead, Microsystems, Aluminum, Reactive ion etching
In order to successfully integrate bottom-up fabricated nanostructures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reliable ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end of a microcantilever, while avoiding contamination of the used cleanroom process equipment. The methods are suitable for fabrication of scanning probe tips and nanoelectrodes for advanced characterization probes.