As we strive toward smaller and smaller pitches and new 3D constructs to enable device scaling, thorough defect characterization at wafer scale is essential during the early phases of process optimization. Often CD (critical dimension) variations and roughness lead to high SEM (scanning electron microscope) inspection noise. It is important to suppress this noise and increase DOI (defect of interest) SNR (signal-to-noise ratio) for better detection efficiency while maintaining high speed for meaningful wafer coverage. In this work, we describe experiments and show characterization results for capturing EUV (extreme ultraviolet) stochastic defects across various test structures of 28nm pitch devices that have been patterned using single exposure 0.33NA EUV lithography. We have used KLA eSL10TM for SEM inspection and analysis. The tool can also be used for high resolution and high-speed metrology, providing quick feedback on observed defect signatures and further root cause analysis.
As we strive toward smaller and smaller pitches to enable device scaling, thorough defect characterization at wafer scale continues its importance during the early phases of process optimization. In this paper, we describe experiments and show characterization results for capturing stochastic defects across various test structures of 28 nm pitch devices that have been patterned using single exposure EUV lithography. The objective of this work is to quantify detection sensitivity of critical defect types on multiple test structures, and study wafer and die level signatures for some of the types. We will employ various, complementary optical and e-beam inspection and review techniques. Further, new methods to increase sensitivity of optical inspection after litho are also discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.