Mr. Chih-Hsien Lin Profile

Chih-Hsien Lin

at National Yang Ming Chiao Tung Univ.

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Proceedings Article | 26 February 2019 Paper

Circularly polarized lasing of ultraviolet plasmonic gammadion nanocavity

Pi-Ju Cheng, Ming-Sheng Lai, Yu-Hao Hsiao, Cheng-Li Yu, Chiao-Yun Chang, Chi-Ti Hsieh, Chih-Hsien Lin, Min-Hsiung Shih, Hao-Chung Kuo, Shu-Wei Chang

Proceedings Volume 10912, 109121C (2019) https://doi.org/10.1117/12.2507979

KEYWORDS: Plasmonics, Gallium nitride, Polarization, Metals, Lasers, Ultraviolet radiation, Dichroic materials, Finite element methods, Light sources, Refractive index

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In this work, we present the model of plasmonic chrial nanolasers composed of aluminum-coated gallium-nitride (GaN) gammadions, which may lase with a high degree of circular polarization at room temperatures. Using the finite-element method, we examine resonant modes of the four-fold rotationally symmetric cavities of gammadions whose resonant frequencies lie in the gain spectrum of GaN. We find a degenerate doublet of resonant modes which can couple to plane waves in the far-field zone above gammadions. Their near-field profiles exhibit localized distribution in the arms of gammadions and a Fabry-Perot standing-wave pattern along the post. In practice, fabrication imperfections would inevitably spoil the four-fold rotation symmetry of gammadions. Typical perturbation could lift the degeneracy of doublet and leads to mixing of the two degenerate modes which may still output signals with observable handedness above gammadions. Considering a gammadion cavity with a single elongated arm, we show that the magnitude of dissymmetry factor of its resonant mode can be larger than unity. Our calculations are consistent with the experimental results, indicating that the right-handed gammadion cavities lase with a magnitude of dissymmetry factors near 1 at a wavelength of 364 nm. The dimensionless effective mode volume scaled by the cube of effective wavelength is 2.62, reflecting a modal distribution remarkably confined in the plasmonic structures and the capability of enhancing the spontaneous-emission rate noticeably. These chiral nanolasers with an ultrasmall footprint could be potentially utilized as future circularly-polarized photon source at the chip level.

Proceedings Article | 26 February 2019 Presentation + Paper

Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers

Chi-Ti Hsieh, Pi-Ju Cheng, Chih-Hsien Lin, Shu-Wei Chang

Proceedings Volume 10912, 109120V (2019) https://doi.org/10.1117/12.2508189

KEYWORDS: Quantum wells, Gallium arsenide, Transistors, Modulation, Heterojunctions

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Light-emitting transistor (LET) and transistor laser (TL) can provide the high-speed electrical and optical modulations simultaneously, advancing light-emitting diodes and diode lasers. Still, between experimental data and rate-equation modeling, there are two-order-of-magnitude uncertainties on the carrier lifetimes of quantum wells (QWs) inserted in heavily p-doped bases of these devices. In view of the importance of this timescale on the modulation speed, we provide a comprehensive approach to calculate carrier lifetimes under such circumstances. We model the Hartree potential energy with self-consistent solutions of the Schrodinger’s and Poisson’s equations. The hole distribution is obtained from real-space density of states through multiband retarded Green functions, taking the outgoing-wave features of hole quasi-bound states into account. We then estimate the carrier lifetimes based on a multiband source-radiation approach including both bound-to-bound and bound-to-continuum components of spontaneous (SP) emissions. Under low surface carrier injections, a large Hartree potential is formed, and the valence band around the QW is strongly tilted. Both bound and quasi-bound valence states are present, and quasi-bound holes may tunnel out of QW and reemerge in the base. The SP spectrum from the QW in the heavily doped base is significantly larger than that from an undoped one due to preexisting holes. At the high injection level, the screening effect significantly reduces the Hartree potential and band bending. We also include the nonradiative Auger recombination to evaluate the total carrier lifetime. Overall carrier lifetimes and small-signal ones are estimated as hundred picoseconds at a doping density of 10¹⁹ cm⁻³ and might be even shorter in the case of heavier doping.

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