Dr. Christopher Constantine Profile

Dr. Christopher Constantine

Senior Principle Scientist at Oerlikon USA Inc

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 20 October 2006 Paper

Controlling CD uniformity for 45nm technology node applications

J. Plumhoff, S. Srinivasan, R. Westerman, D. Johnson, C. Constantine

Proceedings Volume 6349, 63490A (2006) https://doi.org/10.1117/12.686390

KEYWORDS: Etching, Photomasks, Chromium, Binary data, Critical dimension metrology, Plasma, Control systems, Ions, Lithography

Read Abstract +

Proceedings Article | 20 May 2006 Paper

Binary Cr etch process control directed at the 45nm node

J. Plumhoff, R. Westerman, C. Constantine

Proceedings Volume 6283, 62831U (2006) https://doi.org/10.1117/12.681757

KEYWORDS: Etching, Chromium, Genetic algorithms, Signal processing, Plasma, Photomasks, Signal to noise ratio, Plasma etching, Sensors, Reflectivity

Read Abstract +

Proceedings Article | 28 June 2005 Paper

Quartz etch process for alternating aperture phase shift masks (alt-APSM)

Sunil Srinivasan, Russ Westerman, Jason Plumhoff, Dave Johnson, Chris Constantine

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617095

KEYWORDS: Etching, Quartz, Photomasks, Phase shifts, Chromium, Chemistry, Dry etching, Plasma, Scanning electron microscopy, Photoresist processing

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV

Sunil Srinivasan, Jason Plumhoff, Russ Westerman, Dave Johnson, Chris Constantine

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.571468

KEYWORDS: Etching, Photomasks, Quartz, Scanning electron microscopy, Reactive ion etching, Phase shifts, Dry etching, Lithography, Manufacturing, Surface roughness

Read Abstract +

Proceedings Article | 20 August 2004 Paper

Achieving 65-nm design rule dry etch performance: a study of CD bias, uniformity, and linearity on binary chrome photomasks

Jason Plumhoff, Chris Constantine, Brad Reelfs

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557706

KEYWORDS: Etching, Photomasks, Reactive ion etching, Chromium, Critical dimension metrology, Dry etching, Optical proximity correction, Binary data, Photoresist materials, Lithography

Read Abstract +

Proceedings Article | 17 December 2003 Paper

90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518043

KEYWORDS: Opacity, Mask making, Electron beam lithography, Photoresist processing, Etching, Chemically amplified resists, Optical proximity correction, Line edge roughness, Photomasks, Scattering

Read Abstract +

Proceedings Article | 17 December 2003 Paper

Improvements in binary chrome CD performance utilizing an optimized 4th-generation reactor platform

Jason Plumhoff, Chris Constantine, Jong Shin, Brad Reelfs, Emmanuel Rausa

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518138

KEYWORDS: Reactive ion etching, Etching, Chromium, Photomasks, Neodymium, Plasma, Dry etching, Binary data, Diffractive optical elements, Standards development

Read Abstract +

Proceedings Article | 28 August 2003 Paper

Evalution of 193-nm alternating-aperture phase-shift mask dry etch processes

Jason Plumhoff, Chris Constantine, Jong Shin, B. Reelfs, Emmanuel Rausa, Jason Benz, Michael Hibbs, Timothy Brunner

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504198

KEYWORDS: Etching, Quartz, Photomasks, Image processing, Diffractive optical elements, Dry etching, Phase shifts, Surface roughness, Scanning electron microscopy, Chromium

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Improving feature-size linearity for alternating phase-shift mask applications utilizing a next-generation ICP source

Jong Shin, Chris Constantine, Jason Plumhoff, Emmanuel Rausa

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467580

KEYWORDS: Etching, Photomasks, Quartz, Reactive ion etching, Chromium, Deep ultraviolet, Manufacturing, Oxygen, Plasma, Phase shifts

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Chris Constantine, Thomas Hoffmann, Corinna Koepernik, Christian Krauss, Bernd Leibold, Florian Letzkus, Dietmar Mueller, Reinhard Springer, Peter Voehringer

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476944

KEYWORDS: Photomasks, Semiconducting wafers, Mask making, Line edge roughness, Etching, Silicon, Coating, Chemically amplified resists, Photoresist processing, Chromium

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source

Jason Plumhoff, Chris Constantine, J. Shin, Emmanuel Rausa

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476973

KEYWORDS: Etching, Quartz, Reactive ion etching, Photomasks, Diffractive optical elements, Plasma etching, Plasma, Chromium, Chemistry, Scanning electron microscopy

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Investigation of MoSi etch processes for embedded attenuating phase shift mask applications utilizing a next-generation ICP source

Jason Plumhoff, Chris Constantine, C. Strawn, J. Shin

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458282

KEYWORDS: Etching, Quartz, Diffractive optical elements, Photomasks, Critical dimension metrology, Plasma, Plasma etching, Reactive ion etching, Scanning electron microscopy, Phase shifts

Read Abstract +

Proceedings Article | 9 April 2001 Paper

Investigation of quartz etch rate uniformity for alternating phase-shift mask applications utilizing a next-generation ICP source

C. Strawn, Chris Constantine, Jason Plumhoff, Russell Westerman

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425099

KEYWORDS: Etching, Quartz, Photomasks, Phase shifts, Plasma, Dry etching, Electroluminescence, Surface roughness, Optical lithography, Lithography

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source

Russell Westerman, Chris Constantine, Jason Plumhoff, C. Strawn

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410708

KEYWORDS: Etching, Quartz, Plasma, Plasma etching, Photomasks, Phase shifts, Dry etching, Lithium, Surface roughness, Lithography

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III

Chris Constantine, Russell Westerman, Jason Plumhoff

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410745

KEYWORDS: Chromium, Etching, Plasma, Plasma etching, Photomasks, Binary data, Diffusion, Systems modeling, Finite element methods, Data modeling

Read Abstract +

Proceedings Article | 30 December 1999 Paper

Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads

Chris Constantine, Russell Westerman, Jason Plumhoff

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373288

KEYWORDS: Chromium, Etching, Plasma, Plasma etching, Photomasks, Binary data, Dry etching, Reticles, Wet etching, Ions

Read Abstract +

Proceedings Article | 25 August 1999 Paper

Plasma etching of Cr: a multiparameter uniformity study utilizing patterns of various Cr loads

Chris Constantine, Russell Westerman, Jason Plumhoff

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360203

KEYWORDS: Chromium, Etching, Plasma etching, Photomasks, Plasma, Photoresist processing, Optical proximity correction, Dry etching, Diffractive optical elements, Binary data

Read Abstract +

Proceedings Article | 18 December 1998 Paper

Inductively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results

Chris Constantine, David Johnson, Russell Westerman, Andrew Hourd

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332879

KEYWORDS: Etching, Quartz, Plasma, Photomasks, Diffractive optical elements, Reactive ion etching, Plasma etching, Deep ultraviolet, Chemistry, Chromium

Read Abstract +

Proceedings Article | 1 September 1998 Paper

ICP quartz etch uniformity improvement for phase-shift mask fabrication

Chris Constantine, L. Heckerd

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328810

KEYWORDS: Etching, Quartz, Plasmas, Photomasks, Reactive ion etching, Semiconducting wafers, Phase shifts, Chemistry, Oxides, Helium

Read Abstract +

Proceedings Article | 28 July 1997 Paper

Plasma etching of Cr photomasks: parametric comparisons of plasma sources and process conditions

Chris Constantine, David Johnson, Russell Westerman, Thomas Coleman, Thomas Faure

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277267

KEYWORDS: Etching, Chromium, Critical dimension metrology, Oxygen, Diffractive optical elements, Plasma, Scanning electron microscopy, Plasma etching, Photoresist processing, Reactive ion etching

Read Abstract +

As device design rules continue to shrink, on-mask Cr structures must experience a corresponding reduction in size. Although 0.25 micrometer design rules require only 1 micrometer Cr features, the use of OPC structures, which may be needed to minimize line foreshortening and corner rounding, necessitate features to be etched into the Cr which are significantly smaller than this. This need, coupled with the demand for reduced CD bias and improved CD uniformities, requires the use of an alternate chrome etch technology. Plasma etching of Cr can be highly anisotropic, greatly reducing the etch under cut which is responsible for the CD bias typically associated with wet etching. Reactive ion etching (RIE) can provide significant enhancements in the capability of replicating micron and sub-micron features, but the Cr etch rate non-uniformity which is typical of this technique can translate into a CD nonuniformity. This is due in part to the relatively high pressure of operation (50 - 100 mTorr which is necessary to reduce the self generated dc voltage And which minimizes the photo resist etch rate. Recently, high density plasma sources, such as inductively coupled plasma (ICP), have become available which have the ability to operate both at low pressures and high plasma density while maintaining a low and controllable dc voltage. The low pressure operation significantly improves the etch rate uniformity and consequently the CD uniformity. In this study a design of experiment (DOE) is used to investigate the parameter space associated with the dry etching of Cr using an ICP source. The responses of Cr etch rate, selectivity to photo resist, CD uniformity and mean CD to target are studied, and from this an optimized parameter space is defined. Within this space the effect of overetch, dc voltage and pattern loading on the CD uniformity are also investigated. The role played by the photo resist profile in determining the Cr etch profile is also studied and preliminary measurements are made to understand the effect of the above parameters on the mask CD bias.

Proceedings Article | 12 February 1997 Paper

Plasma etching of Cr photomasks: optimization of process conditions and CD control

Chris Constantine, David Johnson, Russell Westerman, Thomas Coleman, Thomas Faure, Leonard Dubuque

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301179

KEYWORDS: Etching, Chromium, Critical dimension metrology, Plasma etching, Plasma, Oxygen, Scanning electron microscopy, Diffractive optical elements, Atomic force microscopy, Photoresist processing

Read Abstract +

As device design rules continue to shrink, on-mask Cr structures must experience a corresponding reduction in size. Although 0.25 micrometer design rules require only 1 micrometer Cr features, the use of OPC structures, which may be needed to minimize line foreshortening and corner rounding, necessitate features to be etched into the Cr which are significantly smaller than this. This need, coupled with the demand for reduced CD bias and improved CD uniformities, requires the use of an alternate chrome etch technology. Plasma etching of Cr can be highly anisotropic, greatly reducing the etch undercut which is responsible for the CD bias typically associated with wet etching. Reactive ion etching (RIE) can provide significant enhancements in the capability of replicating micron and sub-micron features, but the Cr etch rate non-uniformity which is typical of this technique can translate into a CD non-uniformity. This is due in part to the relatively high pressure of operation (50 - 100 mTorr) which is necessary to reduce the self generated dc voltage and which, in turn, minimizes the photo resist etch rate. Recently, high density plasma sources, such as inductively coupled plasma (ICP), have become available which have the ability to operate both at low pressures and high plasma density while maintaining a low and controllable dc voltage. The low pressure operation significantly improves the etch rate uniformity and consequently the CD uniformity. By coupling this ICP plasma source with a non-contact backside photomask handling system and a true multi-station 'cluster tool.' In this study a design of experiment (DOE) is used to investigate the parameter space associated with the dry etching of Cr using an ICP source. The responses of Cr etch rate, selectivity to photo resist, CD uniformity and mean CD to target are studied, and from this an optimized parameter space is defined. Within this space the effect of overetch, dc voltage and pattern loading on the CD uniformity are also investigated. The role played by the photo resist profile in determining the Cr etch profile is also studied, and preliminary measurements are made to understand the effect of the above parameters on the mask CD bias.