The study of the selectivity of the plasma etching of functional materials with respect to the mask of a negative electron resist based on hydrogen-silsesquioxane (HSQ) has been carried out. The formation of nanostructures with sub-50 nm critical dimensions by the HSQ mask has been studied for a number of materials: single-crystal silicon, a metallic Ta layer, dielectric layers of SiO2, Al2O3, HfO2, Si3N4, as well as a porous low-k dielectric based on organosilicate glass (OSG) on silicon substrates. It has been found that HSQ resist masks can be used to manufacture prototypes of microand nanoelectronic devices with critical dimensions less than 10 nanometers using a large number of materials, including for creating structures with relatively high aspect ratios with an absolute thickness of layers of functional materials of tens of nanometers.
Neuromorphic computing has been raised as an excellent alternative to conventional digital computing due to scaling limits and heat removal difficulties. At the same time, neuromorphic computing makes special memory requirements, such as high-speed, durability, compatibility with CMOS technology. ReRAM meets these requirements perfectly. Therefore, the goal of this work is to better understand the physics of growth and rupture of metal-like filament in ReRAM.
This paper presents results achieved in thin films deposition of hafnium oxide by using the Russian system “Izofaz TM 200-01” developed by the Research Institute of Precision Machine Manufacturing. Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) and oxygen plasma were used as precursors for atomic layer deposition. Thin films with various thicknesses (100-300 Å) of high uniformity and overall quality were obtained.
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