The effective pixel rate is a key performance parameter of infrared focal plane detectors and is also a key parameter for assessing the reliability degradation trend of the device. The application scenario of InGaAs short wavelength infrared focal plane detectors for interstellar alignment is different from that of conventional imaging detectors, where the signal values of each pixel of the focal plane are mainly used to determine the position of the laser bright spot, rather than the gray values used to generate the image. From the point of view of blind element evaluation, for the low-orbit satellite communications application scenario, the rate of change of the response values of the image elements in each local region of the InGaAs short-wave infrared focal plane detector for interplanetary alignment with optical flux has a greater impact on the performance of the device than the absolute response values of the image elements. In order to adapt to this evaluation requirement, this work designs a sliding window blind element determination method based on the rate of change of the dark signal voltage for the intrinsic characteristics of the detector, which utilizes the principle of equivalence of the effects of luminous flux and integration time on the detector signal voltage value, which is more adaptable to the practical application scenarios of interstellar-aligned shortwave infrared focal plane detectors, and the entire focal plane is divided into a number of localized regions, and the sliding detection window is used for blind element determination, which avoids the fully aligned shortwave infrared focal plane detector. Blind meta-judgment, which avoids the phenomenon of misjudgment that often occurs in global judgment. This blind judgment method is also of great importance for the reliability evaluation of InGaAs shortwave infrared focal plane detectors with high effective pixel rate for interstellar alignment.
The waveguide branch plays an important role in integrated photonic circuits by dividing input light into two or more output lights, thereby facilitating optical power distribution and mode selection. Ordinary optical waveguides used in waveguide branches suffer from excessive optical loss and narrow branch angles, limiting their effectiveness in mode selection among other problems. Photonic crystals are constructed by arranging macroscopically homogeneous dielectric (or metallic) materials into periodic arrays, with carefully designed internal defects that provide them with frequency-selective and spatial properties. In this study, a silicon-based wide-angle waveguide branch composed of two-dimensional photonic crystals has been successfully created. The branch is capable of separating two wavelengths of light, namely 850 nm and 950 nm, by adjusting the positions of silicon cylinders in the two-dimensional photonic crystal with the purpose of optimizing optical power at different wavelengths. The silicon-based wide-angle waveguide branch is expected to be employed in multimode optical communication systems. Its utilization will contribute towards the reduction in size and complexity of integrated optical communication systems, while enhancing system reliability.
HgCdTe infrared focal plane array imaging detectors have been widely used in a variety of fields such as night vision surveillance, remote sensing mapping and astronomical observation. In recent years, with the development of semiconductor manufacturing processes, the array size of HgCdTe IR focal plane array imaging detectors has gradually increased, and the preparation process has become increasingly complex. During the preparation process, impurity ions can enter the HgCdTe material and cause degradation of device performance or even device failure. This work investigates the distribution of impurity elements in HgCdTe IR focal plane array detectors prepared by both processes and the mechanism by which impurity elements cause device failure.
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