Mr. Hsin-Fu Tseng Profile

Hsin-Fu Tseng

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 26 August 2024 Paper

Actinic inspection improvement and application in high volume manufacturing for N3 node and beyond

Hao-Ming Chang, Hsin-Fu Tseng, C.H. Lu, S.C. Hsu, Yu-Ting Chen, Wei-Chung Hu, Ajay Nandoriya, Yi-An Huang, Yung-Sheng Chang, C.W. Wen, C.L. Chen, Frankie F. Tsai, Keisuke Noguchi, Hiroki Miyai, Masayasu Nishizawa, Atsushi Tajima, Hirokazu Seki

Proceedings Volume 13177, 131770Q (2024) https://doi.org/10.1117/12.3032058

KEYWORDS: Extreme ultraviolet, Inspection, Tin, Actinic inspection, Pellicles, Deep ultraviolet, High volume manufacturing, Deep learning, Manufacturing, Liquids

Read Abstract +

Proceedings Article | 21 November 2023 Presentation + Paper

Realizing EUV photomask defectivity qualification by actinic mask review system

Jiun-Lung Lu, Chien-Hsing Lu, Hsin-Fu Tseng, Vincent C. Wen, Chun-Hung Chen, Yi-An Huang, Yung-Sheng Chang, Sagar Trivedi, Danping Peng, Takayuki Morisawa, Hiroki Miyai

Proceedings Volume 12751, 127510P (2023) https://doi.org/10.1117/12.2688176

KEYWORDS: Extreme ultraviolet, Photomasks, Reticles, Printing, Semiconductors, Semiconducting wafers, Integrated circuits, Source mask optimization, Risk assessment, Reliability

Read Abstract +

Proceedings Article | 21 November 2023 Presentation + Paper

Actinic inspection technology enhancement for N3 node and beyond

Hao-Ming Chang, Hsin-Fu Tseng, C. Lu, S. Hsu, Wei-Chung Hu, Ajay Nandoriya, Yi-An Huang, Yung-Sheng Chang, C. Wen, Frankie F. Tsai, Hiroki Miyai, Masayasu Nishizawa, Atsushi Tajima, Hirokazu Seki

Proceedings Volume 12751, 1275103 (2023) https://doi.org/10.1117/12.2688174

KEYWORDS: Tin, Extreme ultraviolet, Inspection, Pellicles, Liquids, Plasma, Actinic inspection, Design and modelling, Deep ultraviolet, Sensors

Read Abstract +

Given the successful development in actinic pattern mask inspection (APMI), high-volume manufacturing of advanced chips including N5 and N3 was realized due to the defect-free masks provided by the TSMC mask shop. This achievement was attributed to the newly developed EUV source and GPU-based defect detection with machine learning (ML) assistance. Unlike conventional approaches which sustain less than two weeks, the rotated crucible fed by Sn fuel in the LPP (Laser-produced plasma) system provided one month of operating stability with ultra-low tin consumption. The newly developed LPP EUV light source has been moved towards double IR power to produce higher EUV photon counts, resulting in better throughput and inspection sensitivity. It enables captured images to possess an effective signalto-noise ratio (SNR) and reasonable inspection nuisance counts. The common technique challenges, Sn auto-refuel and debris mitigation, were overcome by auto-refuel and reuse, debris mitigation, and plasma position control. Moreover, the LPP system also showed its capability in performing pellicle inspection to prolong mask operation periods in wafer foundries. For the GPU-based inspection system, it provided the feasibility and flexibility in algorithm development compared to the FPGA approach. The TSMC developed machine-learning (ML) based rendering model played a key role in aligning features with tool images in D2D mode, as well as residue reduction of D2DB mode. All rendering models were implemented by CUDA coding and running on TSMC-customized GPU architecture to fulfill the goal of high-speed computation and defect capture rate that met production specifications. Combining with the ML model, proper detectors were designed for each specific feature, such as SRAF and curvy OPC design, and the performance of auto defect classification (ADC) with the model has been proven. By integrating all the work, it enabled the actinic tools to fulfill the requirement of massive production significantly.

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years