This presentation will provide an overview of the state-of-the-art in the development of AlGaN-based far-UVC-LED technologies. We will explore origins for the observed decline in the external quantum efficiency (EQE) with decreasing emission wavelength and present different approaches to improve the RRE, CIE, and LEE of UV light emitters. We will also discuss design aspects for far-UVC irradiation systems and provide an outlook of future prospects of far-UVC-LED device technology as well as the potential for a wider use of far-UVC sources in applications like room air disinfection.
Electrical and optical excitation of the active region of a UVB LED chip was combined while imaging its in-plane lateral light emission by a UV camera. This made it possible to distinguish between spatial distribution in current density and in efficiency of radiative recombination of charge carriers. It is demonstrated that the degradation of the active region is more prominent in the areas where the local current density increased throughout the long-term operation. It will be shown how the spatial intensity distributions in UVB and UVC LEDs are affected by the operation current, chip design, and mesa edges.
Light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) are of great interest for monitoring gases, pollutants in water as well as the in-vivo inactivation of multi-drug-resistant bacteria. This paper reviews advances in development of AlGaN-based DUV-LEDs, including the realization of low defect density AlN on sapphire. DUV-LEDs near 230 nm with output powers of more than 3 mW will be demonstrated and the root causes for the efficiency drop at shorter UV wavelength will be explored, including changes in the polarization of light emission, the role of point defects as well as carrier injection in AlGaN MQWs.
Recent advances in optimizing the efficiency and lifetime of far-UVC LEDs with emission wavelengths below 240 nm are presented. The design of the semiconductor heterostructure is considered as well as the chip layout. Cross-comparisons are used to draw general conclusions about degradation mechanisms in UV LEDs and to identify development strategies to minimize them. Furthermore, it is discussed which chip packaging is particularly suitable for a combination of far-UVC LEDs with spectral filters. Finally, far-UVC irradiation systems for skin-friendly irradiation of the human body are presented and their performance is illustrated with selected medical and biological data.
The aging behavior of Quantum Wells (QW) in UVB-emitting devices is analyzed. In addition to the standard lifetime tests, we measured the non-equilibrium carrier lifetime in the QW by time-resolved photoluminescence (PL) and performed spatially resolved PL measurements. In this way, we distinguish the different contributions that lead to a decrease in the emission power of the device. We show that the aging-induced increase of spatial inhomogeneities of the PL also affects the transient PL behavior.
Far-UVC LEDs are interesting for applications such as skin-tolerant inactivation of multiresistant pathogens and gas sensing. We present the development of 233 nm AlGaN-based far-UVC LEDs with an emission power of 3 mW at 200 mA and L50 lifetime of more than 1000 h, after burn-in. Additionally, the design of a far-UVC LED-based irradiation system, with a spectral filter which supresses emission >240 nm, to study the inactivation of bacteria and skin compatibility of the radiation will be presented. The system can be used to homogeneously irradiate a target area of 70 mm diameter with a mean irradiance of 0.4 mW/cm².
Driven by applications like monitoring of combustion engines, toxic gases, nitrates in water, as well as the inactivation of multi-drug-resistant germs, the development of AlGaN-based light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) has markedly intensified. This paper will provide a review of recent advances in development of DUV-LEDs, including the realization of low defect density AlGaN heterostructures on sapphire substrates. The performance characteristics of DUV LEDs emitting in the wavelength range between 260 nm and 217 nm will be discussed and milli-Watt power LEDs near 233 nm will be demonstrated.
The development of efficient (In)AlGaN light emitting diodes (LEDs) in the ultraviolet B (UVB) spectral region (280nm-320nm) is essential due to their vast commercial potential. UVB LEDs are expected to not only replace traditional mercury lamps in applications such as curing of materials and phototherapy but also to establish new applications in the fields of plant growth and sensing. Although a lot of progress has been made on the performance of the UVB LEDs, the efficiency of the devices as well as the lifetime still needs to be improved. In this study the influence of the heterostructure design and package on the efficiency of UVB LEDs, grown by metalorganic vapor phase epitaxy on c-plane sapphire substrates, will be presented. Firstly, the performance of UVB AlGaN and InAlGaN multiple quantum well LEDs were studied and the influence of the material composition on the emission characteristics was analyzed. Secondly, the performance of LEDs with different electron blocking layer (EBL) designs and doping concentrations was compared. The highest internal quantum efficiency and emission power were obtained for LEDs with a gradient-like EBL, with decreasing aluminum content, because of the improved carrier injection. Additionally, the output power of the LEDs was found to increase with the p-doping level in the EBL. Finally, investigations on the influence of the metal contacts and insulator as well as the device packaging on the performance of UVB LEDs will be presented. Based on these optimizations, 315nm LEDs with output powers up to 10mW at 100mA were realized
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