Dr. Hyun Soon Lim Profile

Dr. Hyun Soon Lim

at Korea Kumho Petrochemical Co Ltd

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Author

Publications (6)

Proceedings Article | 17 April 2014 Paper

The factors affecting improvement sensitivity, CDU, and resolution in EUV resist

Joonhee Han, Hyun Soon Lim, Jin Ho Kim, Sumi Choi, Jin Bong Shin, Chang Wan Bae, In Young Yoo, Bong Ha Shin, Eun Kyo Lee, Hyun Sang Joo, Dong Chul Seo, Jun Sung Chun

Proceedings Volume 9048, 90482R (2014) https://doi.org/10.1117/12.2046573

KEYWORDS: Polymers, Extreme ultraviolet, Lithography, Polymer thin films, Electroluminescence, Extreme ultraviolet lithography, Palladium, Line width roughness, Diffusion, Scanning electron microscopy

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Proceedings Article | 1 April 2013 Paper

The study of novel PAG containing acid amplifier in EUV resist material

Hyun Sang Joo, Jin Ho Kim, Joon Hee Han, Chang Wan Bae, Jin Bong Shin, Hyun Soon Lim, Seung Duk Cho, Sam Min Kim

Proceedings Volume 8679, 86792Z (2013) https://doi.org/10.1117/12.2010861

KEYWORDS: Polymers, Extreme ultraviolet, Diffusion, Amplifiers, Line width roughness, Extreme ultraviolet lithography, Semiconducting wafers, Chemical species, Yield improvement, Sodium

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Proceedings Article | 23 March 2012 Paper

The factor affecting LWR and sensitivity in EUV resist material

Joonhee Han, Jin Bong Shin, Yong Hwa Hong, So Jung Park, Hyun Soon Lim, Hyun Sang Joo, Sam Min Kim, Dong Chul Seo

Proceedings Volume 8322, 83222B (2012) https://doi.org/10.1117/12.916025

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Diffusion, Electron beam lithography, Lithography, Light sources, Semiconducting wafers, Oxygen

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Proceedings Article | 8 April 2011 Paper

Study of acid diffusion of anionic or cationic polymer bound PAG

Jin Bong Shin, Hyun Sang Joo, Seung Duk Cho, Hyun Soon Lim, Jin Ho Kim, Seung Jae Lee, Dae Hyeon Shin, JoonHee Han, Dong Chul Seo

Proceedings Volume 7969, 79692N (2011) https://doi.org/10.1117/12.870702

KEYWORDS: Diffusion, Polymers, Line edge roughness, Extreme ultraviolet, Photoresist materials, Semiconducting wafers, Edge roughness, Extreme ultraviolet lithography, Lithography, Silicon

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Proceedings Article | 4 December 2008 Paper

Cycloolefin effect in cycloolefin-(meth)acryl copolymer

Hyun Soon Lim, Dong Chul Seo, Chang Soo Lee, Sang Wok Park, Sang Jin Kim, Dae Hyeon Shin, Jin Bong Shin, Joo Hyun Park

Proceedings Volume 7140, 71403X (2008) https://doi.org/10.1117/12.804642

KEYWORDS: Polymers, Etching, Photoresist materials, Resistance, Transmittance, Monochromatic aberrations, Lithography, Polymerization, Line width roughness, Glasses

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One of the most important factors in ArF resist development is a resin platform, which dominates a lot of parts of resist characteristics. It has been much changed in order to improve their physical properties such as resolution, pattern profile, etch resistance and line edge roughness. Through the low etch resistance in ArF initial (meth)acryl type copolymer and low transmittance in COMA type copolymer most researchers were interested in developing of (meth)acryl type copolymer again for ArF photoresist. On the other hand, we have studied various polymer platforms suitable ArF photoresist except for meth(acryl) type copolymer. As a result of this study we had developed ROMA type polymers and cycloolefin-(meth)acryl type copolymers. Among the polymers cycloolefin-(meth)acryl type copolymer has many attractions such as etch roughness, resist reflow which needs low glass transition temperature and solvent solubility. In this study, we intend to find out cycloolefin-(meth)acryl copolymer characteristics compared with (meth)acryl copolymer. And, we have tried to find out any differences between acrylate type copolymer and cycloolefin-(meth)acrylate type copolymer with various evaluation results. As a result of this study we are going to talk about the reason that the resist using acrylate type copolymer and cycloolefin-(meth)acryl type copolymer show good pattern profile while acrylate type copolymer show poor pattern profile. We also intend to explain the role of cycloolefin as a function of molecular weight variation and substitution ratio variation of cycloolefin in cycloolefin-(meth)acrylate resin.One of the most important factors in ArF resist development is a resin platform, which dominates a lot of parts of resist characteristics. It has been much changed in order to improve their physical properties such as resolution, pattern profile, etch resistance and line edge roughness. Through the low etch resistance in ArF initial (meth)acryl type copolymer and low transmittance in COMA type copolymer most researchers were interested in developing of (meth)acryl type copolymer again for ArF photoresist. On the other hand, we have studied various polymer platforms suitable ArF photoresist except for meth(acryl) type copolymer. As a result of this study we had developed ROMA type polymers and cycloolefin-(meth)acryl type copolymers. Among the polymers cycloolefin-(meth)acryl type copolymer has many attractions such as etch roughness, resist reflow which needs low glass transition temperature and solvent solubility. In this study, we intend to find out cycloolefin-(meth)acryl copolymer characteristics compared with (meth)acryl copolymer. And, we have tried to find out any differences between acrylate type copolymer and cycloolefin-(meth)acrylate type copolymer with various evaluation results. As a result of this study we are going to talk about the reason that the resist using acrylate type copolymer and cycloolefin-(meth)acryl type copolymer show good pattern profile while acrylate type copolymer show poor pattern profile. We also intend to explain the role of cycloolefin as a function of molecular weight variation and substitution ratio variation of cycloolefin in cycloolefin-(meth)acrylate resin.

Proceedings Article | 29 March 2006 Paper

Correlation between polymer platform of ArF photoresist and defect in the track nozzle of manufacturing process line

Ji Young Song, Dong Chul Seo, Seung Duk Cho, Hyun Sang Joo, Kyoung Mun Kim, Hyun Soon Lim, Sang Jin Kim, Joo Hyeon Park, Jae Chang Jung, Sung Koo Lee, Chul Kyu Bok, Seung Chan Moon

Proceedings Volume 6153, 61533G (2006) https://doi.org/10.1117/12.657072

KEYWORDS: Polymers, Particles, Solids, Coating, Semiconducting wafers, Contamination, Excimer lasers, Monochromatic aberrations, Lithography, Photoresist materials

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As the minimum feature size of electronic devices continues to shrink, the industry is moving from wavelength of 248-nm KrF excimer laser sources to shorter wavelength of 193-nrn ArF excimer laser and ArF immersion to achieve required higher resolution. As minimum feature sizes are reduced, the ability to minimize defects is getting more important, because they have a close connection with yield. With the replacement of laser source, 248-nm with 193-nm, the platform of polymer was also converted from phenolic polymer into acrylic polymer. With this platform changes unexpected various defect problems had been occurred. Although KrF process causes not much of defect, ArF process causes more serious defect problems. One of those major defect source is solidification of polymer in track nozzle. The solidified polymer at track nozzle needs to be removed periodically, unless it causes significant throughput loss in mass production. The amount of this type of defect relies on physical properties of polymer platform such as hydrophilicity, solubility or structural rigidity. The hydrophilic phenol based KrF polymer shows minor defects, contrarily hydrophobic acryl based ArF polymer causes serious defects. The solidification of acrylate type polymer was caused by poor solubility. In order to improve solubility, olefinic moieties such as norbornylene, norbornyl devertives and opened maleic anhydride monomers were adopted in acrylate polymer. Those inserted olefins and opened maleic anhydride in acrylic polymer changed overall structure such as rigid helix structure into flexible structure. With the increase of solubility, particle defect was dramatically reduced. Conclusively, insertion of cycloolefin and opened maleic anhydride moiety releases rigid acrylic structure and it improves solubility. As solubility improves, crystallization at nozzle has been decreased and the particle defect is reduced. Moreover this flexible structure allows the resist reflow at the moderate temperature which is one of the resolution enhancement techniques.

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