Satellite based Quantum Key Distribution (QKD) in Low Earth Orbit (LEO) is currently the only viable technology to span thousands of kilometres. Since the typical overhead pass of a satellite lasts for a few minutes, it is crucial to increase the the signal rate to maximise the secret key length. For the QUARC CubeSat mission due to be launched within two years, we are designing a dual wavelength, weak-coherent-pulse decoy-state Bennett- Brassard ’84 (WCP DS BB84) QKD source. The optical payload is designed in a 12×9×5cm3 bespoke aluminium casing. The Discrete Variable QKD Source consists of two symmetric sources operating at 785 nm and 808 nm. The laser diodes are fixed to produce Horizontal,Vertical, Diagonal, and Anti-diagonal (H,V,D,A) polarisation respectively, which are combined and attenuated to a mean photon number of 0.3 and 0.5 photons/pulse. We ensure that the source is secure against most side channel attacks by spatially mode filtering the output beam and characterising their spectral and temporal characterstics. The extinction ratio of the source contributes to the intrinsic Qubit Error Rate(QBER) with 0.817±0.001%. This source operates at 200MHz, which is enough to provide secure key rates of a few kilo bits per second despite 40 dB of estimated loss in the free space channel.1
Quantum Key Distribution (QKD) technology has been considered as the ultimate physical layer security due to its dependencies on the physical laws of physics to generate quantum keys. However, for QKD to become functional for practical scenarios, it must be integrated with the classical optical networking infrastructure. Coping with optical nonlinearity from the classical represents a major challenge for QKD systems. In this paper, we take the advantage of the ultra-low nonlinearity of Hollow Core Nested Antiresonant Nodeless Fibre (HC-NANF) to demonstrate the coexistence of discrete-variable quantum key distribution channel with carrier-grade classical optical channels over a 2 km HC-NANF.
Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L < 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.0150, while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.
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