Mr. Jeff Farnsworth Profile

Jeff Farnsworth

Director of Mask Technology at Intel Corp

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 7 March 2008 Paper

Paper

Fabrication of defect-free full-field pixelated phase mask

Wen-Hao Cheng, Jeff Farnsworth, Wai Kwok, Andrew Jamieson, Nathan Wilcox, Matt Vernon, Karmen Yung, Yi-Ping Liu, Jun Kim, Eric Frendberg, Scott Chegwidden, Richard Schenker, Yan Borodovsky

Proceedings Volume 6924, 69241G (2008) https://doi.org/10.1117/12.772955

KEYWORDS: Photomasks, Optical lithography, Glasses, Image resolution, Chromium, Etching, 3D modeling, Electron beam lithography, Defect inspection, Semiconducting wafers

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SPIE Journal Paper | 1 January 2008

Vectorial imaging of deep subwavelength mask features in high NA ArF lithography

Wen-Hao Cheng, Jeff Farnsworth

JM3, Vol. 7, Issue 01, 013001, (January 2008) https://doi.org/10.1117/12.10.1117/1.2841718

KEYWORDS: Photomasks, Polarization, Diffraction, Optical proximity correction, Pellicles, Chromium, Fiber optic illuminators, Lithography, Optical lithography, Diffraction gratings

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Proceedings Article | 14 May 2007 Paper

Paper

Fundamental limit of ebeam lithography

Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6607, 660724 (2007) https://doi.org/10.1117/12.728987

KEYWORDS: Photomasks, Scattering, Electron beam lithography, Optical lithography, Critical dimension metrology, Nanoimprint lithography, Laser phosphor displays, Electrons, Chromium, Diffusion

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Proceedings Article | 27 March 2007 Paper

Paper

Control of polarization and apodization with film materials on photomasks and pellicles for high NA imaging performance

Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6520, 65200O (2007) https://doi.org/10.1117/12.712424

KEYWORDS: Photomasks, Pellicles, Diffraction, Polarization, Apodization, Immersion lithography, Optical proximity correction, Calcium, Polarization control, Imaging systems

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Proceedings Article | 20 October 2006 Paper

Paper

Mask specification for for wafer process optimization

Lin Chen, Phil Freiberger, Jeff Farnsworth, Ruth Stritsman, Richard Rodrigues

Proceedings Volume 6349, 634917 (2006) https://doi.org/10.1117/12.686610

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Tolerancing, Binary data, Lithography, Scanning electron microscopy, Reticles, Metrology

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Proceedings Article | 21 June 2006 Paper

Paper

Mask absorber material dependence of 2D OPC in ArF high NA lithography

Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6281, 62810V (2006) https://doi.org/10.1117/12.692807

KEYWORDS: Photomasks, Polarization, Optical proximity correction, Optical lithography, Lithography, Fiber optic illuminators, 3D image processing, Calibration, Phase shifts, Lithographic illumination

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Proceedings Article | 20 May 2006 Paper

Paper

EUV mask process development and integration

Guojing Zhang, Pei-Yang Yan, Ted Liang, Yan Du, Peter Sanchez, Seh-jin Park, Eric Lanzendorf, Chang Ju Choi, Emily Shu, Alan Stivers, Jeff Farnsworth, Kangmin Hsia, Manish Chandhok, Michael Leeson, Gilroy Vandentop

Proceedings Volume 6283, 62830G (2006) https://doi.org/10.1117/12.681839

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Reflectivity, Defect inspection, Extreme ultraviolet lithography, Inspection, Ruthenium, Image processing, Optical lithography

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Proceedings Article | 24 March 2006 Paper

Paper

Development of an automated multiple-target mask CD disposition system to enable new sampling strategy

Jian Ma, Jeff Farnsworth, Larry Bassist, Ying Cui, Bobby Mammen, Ramaswamy Padmanaban, Venkatesh Nadamuni, Muralidhar Kamath, Ken Buckmann, Julie Neff, Phil Freiberger

Proceedings Volume 6152, 61521K (2006) https://doi.org/10.1117/12.654326

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Metrology, Optical lithography, Process control, Scanning electron microscopy, Manufacturing, Process modeling

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Traditional mask critical dimension (CD) disposition systems with only one or two targets is being challenged by the new requirements from mask-users as the wafer process control becomes more complicated in the newer generation of technologies. Historically, the mask shop does not necessarily measure and disposition off the same kind of CD structures that wafer fabs do. Mask disposition specifications and structures come from the frame-design and the tapeout, while wafer-level CD dispositions are mainly based on the historical process window established per CD-skew experiments and EOL (end of line) yield. In the current high volume manufacturing environment, the mask CDs are mainly dispositioned off their mean-to-target (MTT) and uniformity (6sigma) on one or two types of pre-determined structures. The disposition specification is set to ensure the printed mask will meet the design requirements and to ensure minimum deviation from them. The CD data are also used to adjust the dose of the mask exposure tools to control CD MTT. As a result, the mask CD disposition automation system was built to allow only one or two kinds of targets at most. In contrast, wafer-fabs measure a fairly wide range of different structures to ensure their process is on target and in control. The number of such structures that are considered critical is increasing due the growing complexity of the technology. To fully comprehend the wafer-level requirements, it is highly desirable to align the mask CD sample site and disposition to be the same as that of the wafer-fabs, to measure the OPC (optical proximity correction) structures or equivalent whenever possible, and to establish the true correlation between mask CD measurements vs. wafer CD measurement. In this paper, the development of an automated multiple-target mask CD disposition system with the goal of enabling new sampling strategy is presented. The pros and cons of its implementation are discussed. The new system has been inserted in the production of Intel's 65 nm technologies and has become the POR (plan of record) for the future technologies that are being developed.

Proceedings Article | 15 March 2006 Paper

Paper

Alt- phase-shift mask technology for 65nm logic applications

Kishore Chakravorty, Sven Henrichs, Wei Qiu, Joas Chavez, Yi-Ping Liu, Firoz Ghadiali, Karmen Yung, Nathan Wilcox, Mary Silva, Jian Ma, Ping Qu, Brian Irvine, Henry Yun, Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6154, 61540M (2006) https://doi.org/10.1117/12.654691

KEYWORDS: Quartz, Photomasks, Manufacturing, Etching, Optical lithography, Logic, Critical dimension metrology, Phase shifts, Optical proximity correction, Reticles

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Proceedings Article | 5 November 2005 Paper

Paper

Vectorial effects in subwavelength mask imaging

Wen-Hao Cheng, Jeff Farnsworth, Theodore Bloomstein, Andrew Grenville

Proceedings Volume 5992, 599218 (2005) https://doi.org/10.1117/12.632372

KEYWORDS: Photomasks, Diffraction, Polarization, Pellicles, Chromium, Optical proximity correction, Binary data, Reticles, 3D modeling, Diffraction gratings

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Proceedings Article | 6 December 2004 Paper

Paper

Reduction of radial CD errors and Cr loading effects in 90-nm binary NCAR mask process through chrome etch DOE

Jian Ma, Chaoyang Li, Larry Bassist, Matthew Pekney, Nathan Wilcox, Jeff Farnsworth, Edward Lauder, B. Krishnakumar

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568423

KEYWORDS: Critical dimension metrology, Photomasks, Chromium, Etching, Diffractive optical elements, Semiconducting wafers, Reticles, Phase modulation, Optical proximity correction, Manufacturing

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Proceedings Article | 28 August 2003 Paper

Paper

Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

Wen-Hao Cheng, Kishore Chakravorty, Jeff Farnsworth

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504391

KEYWORDS: Photomasks, Glasses, Optical lithography, Phase shifts, Etching, Opacity, Chromium, Lithography, Phase shift keying, Optical proximity correction

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Proceedings Article | 5 September 2001 Paper

Paper

CF4/O2 plasma simulation and comparison with quartz etch experiment

Han-Ming Wu, Long He, Jeff Farnsworth, Gang Liu

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438386

KEYWORDS: Plasma, Ions, Etching, Plasma etching, Oxygen, Reactive ion etching, Reticles, Quartz, Chemistry, Fluorine

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Proceedings Article | 22 January 2001 Paper

Paper

Tritone inspection for embedded phase-shift mask

Wen-Hao Cheng, Jeff Farnsworth, Edita Tejnil

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410763

KEYWORDS: Inspection, Calibration, Photomasks, Chromium, Optical lithography, Defect inspection, Binary data, Phase shifts, Sodium, Semiconducting wafers

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Proceedings Article | 22 January 2001 Paper

Paper

Technological challenges in implementation of alternating phase-shift mask

Wilman Tsai, Qi-De Qian, Ken Buckmann, Wen-Hao Cheng, Long He, Brian Irvine, Marilyn Kamna, Yulia Korobko, Michael Kovalchick, Steven Labovitz, R. Talevi, Jeff Farnsworth

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410720

KEYWORDS: Etching, Photomasks, Inspection, Image processing, Critical dimension metrology, Optical lithography, Semiconducting wafers, Plasma etching, Phase shifts, Isotropic etching

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Proceedings Article | 18 December 1998 Paper

Paper

Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP 7000 resist

Frederick Chen, Wilman Tsai, Scott Chegwidden, S. Yu, Marilyn Kamna, Jeff Farnsworth, Thomas Coleman

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332864

KEYWORDS: Etching, Plasma etching, Plasma, Chromium, Photomasks, Critical dimension metrology, Standards development, Metals, Reactive ion etching, Diffractive optical elements

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Proceedings Article | 1 September 1998 Paper

Paper

Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-um-generation advanced mask fabrication

Wilman Tsai, Frederick Chen, Marilyn Kamna, Scott Chegwidden, Steven Labovitz, Jeff Farnsworth, Giang Dao

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328796

KEYWORDS: Plasma etching, Etching, Plasma, Wet etching, Critical dimension metrology, Chromium, Optical proximity correction, Photomasks, Mask making, Magnesium

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Proceedings Article | 28 July 1997 Paper

Paper

Application of image-processing software to characterize the photomask key parameters for future technologies

An Tran, Michael Schmidt, Jeff Farnsworth, Pei-yang Yan

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277268

KEYWORDS: Photomasks, Inspection, Image processing software, Silicon, Resolution enhancement technologies, Pellicles, Metrology, Objectives, Edge roughness, Image processing

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Proceedings Article | 24 July 1996 Paper

Paper

New approach to phase metrology for manufacturing 248-nm lithography-based embedded attenuated phase-shifting mask

Giang Dao, Gang Liu, Alan Snyder, Jeff Farnsworth

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245240

KEYWORDS: Photomasks, Reticles, Phase shifts, Binary data, Etching, Metrology, Semiconducting wafers, Phase measurement, Lithography, Dry etching

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Proceedings Article | 3 July 1995 Paper

Paper

248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography

Giang Dao, Gang Liu, Robert Hainsey, Jeff Farnsworth, Yasuo Tokoro, Susumu Kawada, Tsuneo Yamamoto, Nobuyuki Yoshioka, Akira Chiba, Hiroaki Morimoto

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212781

KEYWORDS: Etching, Photomasks, Deep ultraviolet, Lithography, Reticles, Inspection, Phase shifts, Resistance, Semiconducting wafers, Dry etching

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Proceedings Article | 26 May 1995 Paper

Paper

Sub-micron low-k1 imaging characteristics using a DUV printing tool and binary masks

Pei-yang Yan, Robert Hainsey, Jeff Farnsworth, Julaine Neff

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209259

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Photoresist processing, Image processing, Lithography, Process control, Deep ultraviolet, Printing, Scanning electron microscopy

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In this paper, wafer level experimental results on the characteristics of a low-k₁ submicron lithography processes using binary mask and deep ultraviolet (DUV) wavelength (248 nm) printing tool will be discussed. In the study, we investigated the nonlinear response of wafer resist critical dimension (CD) at different pitches to the mask CD. The CD nonlinearity is due to the combination of relatively poor optical aerial image quality at low-k₁ imaging and resist processes. Operating a lithographic process at this nonlinear region presents an issue since only limited process windows are available. In addition, it requires both proximity correction for larger features on the mask and tighter mask CD control. The later requirement, in practice, is rather difficult to achieve with current mask technology. In order to avoid operating low-k₁ lithography processes at CD nonlinear region, improvement of aerial image quality is obviously needed. Although aerial image quality improvement can be achieved with different advanced lithographic enhancement techniques such as phase shift masks and off- axis illumination, there are different process issues related to each of the techniques as well. With conventional illumination source and binary mask, one of the option left to enhance aerial image quality is mask biasing. Our experimental results show that by positively biasing the mask, i.e., mask chrome CD line dimension is larger than targeted resist CD, CD nonlinearity for low-k₁ processes can be improved. For low- k₁ processes, the isofocal bias of different feature sizes (different k₁ factor) was also found to be different. A strong dependence of isofocal bias on pitch was observed. Again, mask biasing can help to shift the isofocal CD of critical dimensions to the target CD. However, in our study, we found that for certain resist, opposite mask biases are required to achieve CD linear response and zero isofocal bias. In this case, tradeoffs between mask CD control, proximity effect, and process window need to be considered.

Proceedings Article | 3 November 1994 Paper

Paper

Ever-increasing role of mask technology in deep submicron lithography

Fu-Chang Lo, Giang Dao, Marc Berube, Nelson Tam, Robert Hainsey, Jeff Farnsworth, Jim DeWitt, Rosanne LaVoy, Susan Daugherty

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191918

KEYWORDS: Photomasks, Lithography, Optical proximity correction, X-ray technology, Inspection, Semiconducting wafers, Reticles, Photoresist processing, X-rays, Manufacturing

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Showing 5 of 22 publications

Conference Committee Involvement (3)

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XIII

18 April 2006 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XII

13 April 2005 | Yokohama, Japan

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