DEPFET detectors with repetitive non destructive readout (RNDR) achieve deep-sub electron noise and present a unique technology for high precision measurements with high time resolution. Due to the active pixel sensor concept, the readout process can be fully parallelized and configured with high modularity - contrary to CCD detectors. One special operation mode is the incremental readout, in which the collected electrons are stored within each pixel to be readout again in the subsequent frame. In this modus, signal electrons accumulate within a stair shaped function and enable the detection of single electrons with a time resolution in the order of 100 µs. Due to the fabrication standards for X-ray spectroscopy, these properties are combined with a fully depleted 450 µm thick bulk, an excellent entrance window and a low dark current. This enables cutting edge applications in direct dark matter detection experiments and photon number resolved measurements down do the near infrared regime. We will present a performance characterization of different RNDR-DEPFET detectors, combined with results from proton irradiations of DEPFET detectors without repetitive readout. For this purpose, detectors were exposed to a proton beam at the MedAustorn accelerator and operated at the same time for in-situ dosimetry. After this study, an extensive annealing phase was investigated to determine the efficiency of potential annealing phases during operation in space. As no lateral charge transfer is needed at DEPFET detectors, an excellent radiation hardness - relevant for space applications - is expected and will be modelled.
The combined storage and amplifier structure of a Depleted P-channel Field-Effect Transistor provides the capability to collect, store and read out charge carriers. In combination with an efficient charge transfer between two storage regions, this enables a statistically independent repetitive non-destructive readout of active pixels integrated on a fully depleted, high purity silicon bulk. Averaging the repetitions allows for deep sub-electron noise levels. After the working principle of those sensors was demonstrated on single pixel devices, a 64×64 pixel detector has been operated for the first time. The sensor achieved a single electron sensitivity by recording the spectrum of a light emitting diode. A mean sub-electron noise below 0.2 e−ENC at a readout time below 230 ms/frame are demonstrated.
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