Warren Waskiewicz, Christopher Biddick, Myrtle Blakey, Kevin Brady, Ron Camarda, Wayne Connelly, A. Crorken, J. Custy, R. DeMarco, Reginald Farrow, Joseph Felker, Linus Fetter, Richard Freeman, Lloyd Harriott, Leslie Hopkins, Harold Huggins, Richard Kasica, Chester Knurek, Joseph Kraus, James Liddle, Masis Mkrtchyan, Anthony Novembre, Milton Peabody, Len Rutberg, Harry Wade, Pat Watson, Kurt Werder, David Windt, Regine Tarascon-Auriol, Steven Berger, Stephen Bowler
We have designed, constructed, and are now performing experiments with a proof-of-concept projection electron-beam lithography system based upon the SCALPELR (scattering with angular limitation projection electron-beam lithography) principle. This initial design has enabled us to demonstrate the feasibility of not only the electron optics, but also the scattering mask and resist platform. In this paper we report on some preliminary results which indicate the lithographic potential and benefits of this technology for the production of sub-0.18 micrometer features.
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