Aluminum nitride (AlN) is a promising photonics material contributed by its wide transparency window and remarkable nonlinear optical property. Moreover, its nonlinear effect can be further enhanced by doping Scandium (Sc). Such nonlinear optical property brings potential for high efficiency in nonlinear optical generation processes, such as 2nd harmonic generation and frequency comb generation. Although the nonlinear optical property of Sc-doped AlN looks promising, its waveguide is facing challenge on loss reduction. In this work, we report Sc-doped AlN photonic integrated circuit with reduced waveguide loss of 6 dB/cm around 1550 nm. The waveguide has Sc doping concentration of 10%. Its etching process is tailored through a design of experiment (DoE) approach to achieve smooth surface. An annealing process is also applied to patterned waveguide for optical loss reduction. A loaded Q of 1.41×104 has also been reported from microring resonator on the same wafer. The reported result paves the way towards low-loss Sc-doped AlN for photonic integrated circuits.
Germanium-on-Silicon (Ge-on-Si) platform has been demonstrated as an excellent candidate for mid-infrared photonics applications, including on-chip mid-infrared spectroscopy and biochemical sensing. However, this platform is often saddled by high propagation loss due to a combination of threading dislocation defects at the Ge/Si interface, absorption in the silicon for λ < 8 μm, and surface scattering due to sidewall roughness. This work investigates the effects on loss reduction through different annealing techniques on Ge-on-Si waveguides fabricated using CMOS-compatible processes. We explore the use of local laser annealing at waveguide sidewalls, whereby the fluence was varied. A non-local annealing technique in hydrogen ambient was also employed as comparison. The propagation losses for wavelengths, ranging from λ = 5 μm to λ = 11 μm, were systematically characterized by fabricating waveguide and grating coupler structures on the same chip. Cutback measurements were performed by varying the waveguide length (of the same width) from L = 1 mm to L = 4 mm. Both hydrogen and laser annealing experiments show marked reduction in the propagation loss, by up to 27% and 46% respectively. This finding paves the way for post-processing techniques to reduce propagation loss in Ge-on-Si platform, which will enable various on-chip mid-IR applications in the future.
We demonstrate a system-level low-power contactless button using MEMS ScAlN-based pyroelectric detector. As pyroelectric detectors can sense instantaneous temperature change, the human finger can act as a thermal source to activate the button. Using our in-house fabricated ScAlN-based pyroelectric detector which does not require any IR source, we package it into a contactless button system designed with electrical read-out circuits and signal processing. This contactless button system could detect the presence of a finger at a center distance measured up to ~4 cm away, ~2 cm radius circle area, suitable for application as contactless elevator button. Our contactless button system using ScAlN-based pyroelectric effect is characterized, tested and compared with a commercial contactless button. The power consumed is measured ~3.5× lower than that of commercial contactless button. The results obtained provide a potential solution towards energy efficient low-power contactless button system.
Microelectromechanical system (MEMS)-based thermal emitter is a key component in an optical sensor to provide broadband emission at mid-infrared wavelengths, where a lot of molecules have their unique absorption profile. However, the thermal emission from a MEMS emitter is typically fixed at a specific spatial coordinate. In this work, a MEMS thermal emitter with piezoelectric actuation to realize active tuning is demonstrated. Thermal emission comes from a doped silicon layer acting as a resistive heater. Piezoelectric actuation is enabled by an aluminum nitride layer on a designed cantilever. The devices are fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible process line. The fabricated thermal emitter at the tip of the cantilever generates broadband MIR thermal emission with spectrum peaked around 10 μm wavelength, and piezoelectric actuation with a displacement of more than 20 μm. The work paves the way towards self-adaptable MEMS directional emitter for various applications including chemical/gas sensing.
A demonstration of an on-chip CO2 gas sensor is reported. It is constructed by the integration of a MEMS-based thermal emitter, a scandium-doped aluminum nitride (ScAlN) based pyroelectric detector, and a sensing channel built on Si substrate. The integrated sensor has a small footprint of 13mm × 3mm (L×W), achieved by the replacement of bulky bench-top mid-IR source and detectors with MEMS-based thermal emitter and ScAlN-based pyroelectric detector, with their footprints occupying 3.15 mm × 3 mm and 3.45 mm × 3 mm, respectively. In addition, the performance of the integrated sensor in detecting CO2 of various concentrations in N2 ambient is also studied. The results indicate that the pyroelectric detector responds linearly to the CO2 concentration. The integration of MEMS emitter, thermal pathway substrate, and pyroelectric detector, realized through CMOS compatible process, shows the potential for massdeployment of gas sensors in environmental sensing networks.
Lithium niobate (LN) has experienced significant developments during past decades due to its versatile properties, especially its large electro-optic (EO) coefficient. For example, bulk LN-based modulators with high speeds and a superior linearity are widely used in typical fiber-optic communication systems. However, with ever-increasing demands for signal transmission capacity, the high power and large size of bulk LN-based devices pose great challenges, especially when one of its counterparts, integrated silicon photonics, has experienced dramatic developments in recent decades. Not long ago, high-quality thin-film LN on insulator (LNOI) became commercially available, which has paved the way for integrated LN photonics and opened a hot research area of LN photonics devices. LNOI allows a large refractive index contrast, thus light can be confined within a more compact structure. Together with other properties of LN, such as nonlinear/acousto-optic/pyroelectric effects, various kinds of high-performance integrated LN devices can be demonstrated. A comprehensive summary of advances in LN photonics is provided. As LN photonics has experienced several decades of development, our review includes some of the typical bulk LN devices as well as recently developed thin film LN devices. In this way, readers may be inspired by a complete picture of the evolution of this technology. We first introduce the basic material properties of LN and several key processing technologies for fabricating photonics devices. After that, various kinds of functional devices based on different effects are summarized. Finally, we give a short summary and perspective of LN photonics. We hope this review can give readers more insight into recent advances in LN photonics and contribute to the further development of LN related research.
Gas sensors have wide applications including industrial process control, environment monitoring, safety control, etc. The distribution of these sensors enables data generation for the emerging trend of big data and internet of things. In this work, chip-based non-dispersive infrared (NDIR) gas sensors are demonstrated. Silicon substrate-integrated hollow waveguide (Si-iHWG), which is formed through silicon wafer etching and bonding, is used as optical channel and gas cell. A high sensitivity of 50 ppm for CO2 sensing is demonstrated. The Si-iHWG chip-based sensor with compactness, low cost, versatility, and robustness provides a promising platform for miniaturized gas sensing in various application scenarios.
A thermal emitter fabricated on complementary metal-oxide-semiconductor (CMOS)-compatible facilities is a key component for low-cost mid-infrared gas sensing. While conventional thermal emitters have broad spectrum and wide emission angle, which limit the sensing performance. In this work, a microelectromechanical system (MEMS)-based thermal emitter with photonic crystal has been designed and fabricated using CMOS-compatible technology. The photonic crystal enables the emission wavelength selectivity within mid-infrared regime. By engineering photonic crystal dimension, the emission enhancement wavelength can be matched to the fingerprint wavelength of chemical gas for efficient chemical gas sensing purpose.
Recent integrated optical phased array architectures, results, and applications will be reviewed. Beam-steering optical phased arrays monolithically integrated with on-chip rare-earth-doped lasers and heterogeneously integrated with CMOS driving electronics will be shown. Passive integrated optical phased arrays that focus radiated light to tightly-confined spots in the near field and that generate quasi-Bessel beams will be discussed. Finally, integrated-phased-array-based visible-light holographic displays will be proposed as a scalable solution towards the next generation of augmented-reality head-mounted displays; passive near-eye holographic displays, visible-light liquid-crystal modulators, and liquid-crystal-based visible-light phased arrays will be presented.
Mode-locked lasers provide extremely low jitter optical pulse trains for a number of applications ranging from sampling of RF-signals and optical frequency combs to microwave and optical signal synthesis. Integrated versions have the advantage of high reliability, low cost and compact. Here, we describe a fully integrated mode-locked laser architecture on a CMOS platform that utilizes rare-earth doped gain media, double-chirped waveguide gratings for dispersion compensation and nonlinear Michelson Interferometers for generating an artificial saturable absorber to implement additive pulse mode locking on chip. First results of devices at 1.9 μm using thulium doped aluminum-oxide glass and operating in the Q-switched mode locking regime are presented.
We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950–2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.
One of the key challenges in the field of silicon photonics remains the development of compact integrated light sources. In one approach, rare-earth-doped glass microtoroid and microdisk lasers have been integrated on silicon and exhibit ultra-low thresholds. However, such resonator structures are isolated on the chip surface and require an external fiber to couple light to and from the cavity. Here, we review our recent work on monolithically integrated rare-earth-doped aluminum oxide microcavity lasers on silicon. The microlasers are enabled by a novel high-Q cavity design, which includes a co-integrated silicon nitride bus waveguide and a silicon dioxide trench filled with rare-earth-doped aluminum oxide. In passive (undoped) microresonators we measure internal quality factors as high as 3.8 × 105 at 0.98 µm and 5.7 × 105 at 1.5 µm. In ytterbium, erbium, and thulium-doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare-earth-doped lasers on silicon. The entire fabrication process, which includes post-processing deposition of the gain medium, is silicon-compatible and allows for integration with other silicon-based photonic devices. Applications of such rare earth microlasers in communications and sensing and recent design enhancements will be discussed.
A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated with silicon-compatible silicon nitride bus waveguides. The 200-μmdiameter thulium microlasers are enabled by a novel high quality-factor (Q-factor) design, which includes two silicon nitride layers and a silicon dioxide trench filled with thulium-doped aluminum oxide. Similar, passive (undoped) microcavity structures exhibit Q-factors as high as 5.7 × 105 at 1550 nm. We show lasing around 1.8–1.9 μm in aluminum oxide microcavities doped with 2.5 × 1020 cm−3 thulium concentration and under resonant pumping around 1.6 μm. At optimized microcavity-waveguide gap, we observe laser thresholds as low as 773 μW and slope efficiencies as high as 23.5%. The entire fabrication process, including back-end deposition of the gain medium, is silicon-compatible and allows for co-integration with other silicon-based photonic devices for applications such as communications and sensing.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.