The problem of radiation damage on photomask becomes more serious in the semiconductor technology using the 193nm ArF excimer laser, this phenomenon of radiation damage is regarded as a serious issue for semiconductor device fabrication. Wafer yield loss could be caused by the mask CD variation and the transmittance loss due to MoSi film radiation damage on the photomask, many studies have been done about the mechanism and the solution of the radiation damage such as haze and Cr migration so far. However, we still need to clarify some abnormal types of growing defects such as scum defects induced by MoSi film radiation damage. In this paper, we introduce a study of ArF Phase Shift Masks radiation damage-induced scum defects. The impact of radiation damage induced scum defects caused mask CD variation found by AIMS-intensity and AIMS-CD. Additionally, the defect's growing location is stronger related to the distance to frame region or scribe line with the Cr layer of the photomask. Also, this defect is not generally removed through the conventional wet cleaning process but it only could be removed by a kind of dry treatment with a wet process. Base on the analysis data and previous kinds of literature we bring forward the possible defects generation mechanism.
The pattern size of semiconductor circuits has been shrunk as technical advances continued. It is critical to the photomask which contained a considerably shrunk circuit and ultra-high density pattern for sub–20nm tech devices. Develop process has a great impact on the quality of the photomask manufacturing such as CD uniformity and defect control. In this paper, we discussion two develop optimization cases to improve CDU and to reduce process defects.
As technical advances continue, the pattern size of semiconductor circuits has shrunk. Defect control becomes tighter due to a decrease in defect size, which affects the image printed on the wafer. It is critical to the photomask, which contained a considerably shrunk circuit and an ultra-high-density pattern. In this paper, we introduce a study of acicular defects in Post-Exposure Bake (PEB) process Airborne Molecular Contamination (AMC). Environment AMC impact masks before and during the PEB process generate a unique defect we call an acicular defect. Based on the experiment results, we will apply different Chemically Amplified Resist (CAR) to different contaminated conditions, which produce varied phenomena including shape and distribution. An appropriate solution to mitigate defects caused by AMC of the PEB process will be proposed.
The pattern size of semiconductor circuits has been shrinking as technical advances continued. Defect control becomes tighter due to a decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra-high density pattern of sub – 20 nm tech devices. In this paper, we introduce two different types of process defects: one of the defects think related to mask blank surface status and the other defect may relate to etching chamber inner surface condition. By the experiment results, we will bring forward the possible defect generation mechanism. Based on this understanding, an appropriate solution by surface treatment methods to mitigate defects will be proposed.
The pattern size of semiconductor circuits has been shrunk as technical advances continued. Defect control becomes tighter due to a decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained a considerably shrunk circuit and ultra-high density pattern for sub – 20 nm tech devices. In this paper we group two types of rare process defects that think come in vacuum chamber contamination here we also present hypothesis defects mechanism and possible solution.
As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 14 nm tech devices. Therefore particle source from all processes should be controlled extremely. Most of defects generated in mask fabrication processes have been mainly created during each unit process. In this paper, we introduce a study of airborne molecular contamination to Cr etching process. The impact of mask front-end handling system to defect generated in Cr etching process even in very lower concentration environment airborne molecular contamination. By the experiment results we will bring forward the possible defect generation mechanism. Based on this understanding, appropriate solution to mitigate defects caused by airborne molecular contamination to Cr etching process will be proposed.
As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 20nm tech device. Therefore particle source from all processes should be controlled extremely. Especially for dry etching process, Yttrium oxide (Y2O3) has been widely used for plasma resistance protective material such as lower electrode cover plate and inductively coupled plasma insulator. However, Y2O3 showed highest erosion rates under Cl2 plasma condition [1], shorten protective lifetime. Therefore, selection of ceramic material must be important for particle control in dry etch process.
In this paper, we introduce Y2O3 coating film fluorination after plasma treatment. Y-F and Y-O bonding energies change after plasma treatment was observed with X-ray photoelectron spectroscopy (XPS). Expect fluorinated surface can prolong protective lifetime in Cl2 plasma condition.
As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 20nm tech device. Therefore particle source from all processes should be controlled extremely. Most of defects generated in mask fabrication processes have been mainly created during each unit process. A different formation mechanism defect which formed between processes to processes is starting to emerge. In this paper, we introduce a very distinctive crosstalk defect between develop to etch process. This defect only in the presence of photoresist, developer, etching species and interaction will produce. We also successful to reproduce this crosstalk defect by particle monitor mask without exposing the production pattern. By the experiment results we will bring forward the possible defect generation mechanism. Based on this understanding, appropriate solution to mitigate defects caused by crosstalk defect between develop to etch will be proposed.
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