Extreme Ultraviolet (EUV) mask has Critical Dimension (CD) errors from various kinds of sources. Those errors are controlled for and corrected by proper correction methods such as fogging effect correction (FEC), loading effect correction (LEC), proximity effect correction (PEC), mask process correction (MPC) and so on. The corrections are mostly done independently. For example, conventionally CD nonlinearity has been the scope of mask process correction (MPC) and proximity effect has been that of proximity effect correction (PEC) because the interaction range considered is different from each other. But in order to improve the CD quality, we may need to consider the residual errors of PEC in MPC as well. For this purpose, we evaluated a new MPC method, named PEC-aware MPC, which considers writer's internal PEC for both model optimization and correction.
EUV lithography draws increasing attention and its expectation is rising. For instance, replacing a triple patterning with ArF immersion lithography to EUV single patterning may reduce 50% of cost and 25% of cycle time [1]. At the same time, the importance of MPC (Mask Process Correction) is also growing [2] [3] [4]. It has become no longer possible to handle recent small and complex features using a rule-based bias approach. It is known that EUV lithography masks have a different structural stack so that “short range effect” of EB proximity effect is observed in mask writing [5]. In this paper, we investigated the above short range effect through MPC model calibration. Mask data preparation step of EUV mask case is performed and the Turn-a-around (TAT) is compared with conventional DUV mask case.
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