KEYWORDS: Near field optics, Near field, Modulation, Semiconductor lasers, Signal intensity, Collimation, Polarized light, Failure analysis, Reflection, Laser damage threshold
Optical feedback may cause accelerated degradation as well as catastrophic optical damage in high-power Laser diodes, directly limiting their output optical power and lifetime. Near-field distribution change caused by optical feedback has high relevance with the reliability and is worthy to be studied. In this study, the influence of optical feedback on the near-field distribution of the laser diode is investigated, as well as the influence on the device failure. A feedback light testing system is successfully established, which integrates power monitoring, spectral measurement, and near-field assessment. Through an investigation into the influence of feedback light, it was observed that it induces instability in the near-field distribution, leading to temporal variations. Under conditions of strong feedback, a stable near-field peak emerged. At even higher current levels, a clear correspondence was identified between the near-field peak and the point of failure. These findings offer valuable insights for the understanding of the influence of optical feedback on the nearfield distribution of the laser diode and its reliability.
Catastrophic optical mirror damage (COMD) limits the output power and reliability of laser diodes (LDs). The self-heating of the laser contributes to the facet temperature, but it has not been addressed so far. This study investigates a two-section waveguide method targeting significantly reduced facet temperatures. The LD waveguide is divided into two electrically isolated sections along the cavity: laser and passive waveguide. The laser section is pumped at high current levels to achieve laser output. The passive waveguide is biased at low injection currents to obtain a transparent waveguide with negligible heat generation. This design limits the thermal impact of the laser section on the facet, and a transparent waveguide allows lossless transport of the laser to the output facet. Fabricated GaAs-based LDs have waveguide dimensions of (5-mm) x (100-μm) with passive waveguide section lengths varied from 250 to 1500 μm. The lasers were operated continuous-wave up to the maximum achievable power of around 15 W. We demonstrated that the two-section waveguide method effectively separates the heat load of the laser from the facet and results in much lower facet temperatures (Tf). For instance, at 8 A of laser current, the standard laser has Tf = 90 °C, and a two-section laser with a 1500 μm long passive waveguide section has Tf = 60 °C. While traditional LDs show COMD failures, the multi-section waveguide LDs are COMD-free. Our technique and results provide a pathway for high-reliability LDs, which would find diverse applications in semiconductor lasers.
Improving the power and efficiency of 9xx-nm broad-area laser diodes reduces the cost of laser systems and expands applications. LDs with more than 25 W output power combined with power conversion efficiency (PCE) above 65% can provide a cost-effective high-power laser module. We report a high output power and high conversion efficiency laser diode operating at 915 nm by investigating the influence of the laser internal parameters on its output. The asymmetric epitaxial structure is optimized to achieve low optical loss while considering high internal efficiency, low series resistance, and modest optical confinement factor. Experimental results show an internal optical loss of 0.31 cm-1 and internal efficiency of 96%, in agreement with our simulation results. Laser diodes with 230 μm emitter width and 5 mm cavity length have T0 and T1 characteristic temperatures of 152 and 567 K, respectively. The maximum power conversion efficiency reaches 74.2% at 5 °C and 72.6% at 25 °C, and the maximum output power is 48.5 W at 48 A (at 30 °C), the highest reported for a 9xx-nm single emitter laser diode. At 25 °C, a high PCE of 67.5% is achieved for the operating power of 30 W at 27.5 A, and the lateral far-field angle with 95% power content is around 8°. Life test results show no failure in 1200 hours for 55 laser diodes. In addition, 55.5 W output was achieved at 55 A from a laser diode with 400 μm emitter width and 5.5 mm cavity length. A high PCE of 64.3% is obtained at 50 W with 47 A.
Catastrophic optical mirror damage (COMD) limits the output power and reliability of lasers diodes (LDs). Laser self heating together with facet absorption of output power cause the facet to reach a critical temperature (Tc), resulting in COMD and irreversible device failure. The self-heating of the laser contributes significantly to the facet temperature, but it has not been addressed so far. We implement a multi-section waveguide method where the heat is separated from reaching the output facet by exploiting an electrically isolated window. The laser waveguide is divided into two electrically isolated laser and transparent window sections. The laser section is pumped at high current levels to achieve laser output, and the passive waveguide is biased at low injection currents to obtain a transparent waveguide with negligible heat generation. Using this design, we demonstrate facet temperatures lower than the junction temperature of the laser even at high output power operation. While standard LDs show COMD failures, the multi-section waveguide LDs are COMD-free. Our technique and results provide a pathway for high-reliability LDs, which would find diverse applications in semiconductor lasers
KEYWORDS: Semiconductor lasers, Resistance, High power lasers, Laser systems engineering, Structural design, Diode pumped solid state lasers, Solid state lasers, Laser welding, Lithium, Cladding
High-power GaAs-based semiconductor lasers are the most efficient source of energy for converting electrical into optical power. 940nm diode lasers are used directly or as pump sources for Yb:YAG solid-state lasers, and are widely used in laser cladding and other fields. Improving electro-optic conversion efficiency and reliable output power are urgent requirements for current research hotspots and industrial laser systems. In this paper, we use an asymmetric epitaxial structure of InGaAs/AlGaAs, which reduces the optical loss and resistance, and adopt better cavity surface technology to present 940nm 1-cm quasi-continuous micro-channel cooling (MCC) laser bars. The lasers are tested under a high duty cycle of 9.6% (600us,160Hz) at 25°C with output power of 660.05W, electro-optic conversion efficiency of 64.71% at 600A and slope efficiency of 1.16 W/A. The peak efficiency reaches 72.4%. The increased efficiency results from a lower threshold current and a lower series resistance. Furthermore, the output power of 1025W (1000A) has been confirmed at a duty cycle of 4% (400us,100Hz).
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