KEYWORDS: Near field optics, Near field, Modulation, Semiconductor lasers, Signal intensity, Collimation, Polarized light, Failure analysis, Reflection, Laser damage threshold
Optical feedback may cause accelerated degradation as well as catastrophic optical damage in high-power Laser diodes, directly limiting their output optical power and lifetime. Near-field distribution change caused by optical feedback has high relevance with the reliability and is worthy to be studied. In this study, the influence of optical feedback on the near-field distribution of the laser diode is investigated, as well as the influence on the device failure. A feedback light testing system is successfully established, which integrates power monitoring, spectral measurement, and near-field assessment. Through an investigation into the influence of feedback light, it was observed that it induces instability in the near-field distribution, leading to temporal variations. Under conditions of strong feedback, a stable near-field peak emerged. At even higher current levels, a clear correspondence was identified between the near-field peak and the point of failure. These findings offer valuable insights for the understanding of the influence of optical feedback on the nearfield distribution of the laser diode and its reliability.
Our primary goal is to significantly enhance the output power of broad-area Laser Diodes (LDs) for improved cost-effectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 µm, achieving a Continuous-Wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in Quasi-Continuous-Wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration.
Semiconductor Laser Diodes (LDs) generate high output powers with high power conversion efficiencies. While broad-area LDs are favored for high-power applications, narrow-waveguide LDs are in demand for their single-mode characteristics. However, LDs suffer from device failures caused by Catastrophic Optical Damage (COD) due to elevated self-heating at high operating currents. It is critical to understand the COD mechanism in these devices to enhance their reliability and operating output power. In this study, we investigated the self-heating and temperature characteristics of LDs with varying waveguide widths to uncover the cause of their failure mechanism. We assessed the performance, junction, and facet temperatures of the narrow (W=7 μm) and broad waveguide (W=100 μm) LDs. The narrower waveguide LDs achieved and operated at higher output power densities but, surprisingly, maintained lower junction and facet temperatures. Additionally, we employed a thermal simulation model to analyze heat transport characteristics versus LD waveguide widths. The simulation results showed that narrower waveguide LDs exhibit improved three-dimensional heat dissipation, resulting in reduced junction and facet temperatures and, thus, enhanced reliability. Our simulations align well with the experimental data. The findings demonstrate a transition in heat dissipation characteristics from broad to narrow waveguide behavior at approximately 50 μm width. These results clarify the fundamental reasons behind the superior reliability of narrower waveguide LDs and provide valuable guidance for LD thermal management.
We have developed a high-power, high-reliability single-mode 980nm semiconductor laser pump module for all-optical networks in the optical communication industry, including terrestrial long-distance optical fiber communication, submarine optical cables, and satellite communication. This module serves as the core key component of Erbium-Doped Fiber Amplifiers (EDFA). To achieve an 80% coupling efficiency, we utilized the 14-pin butterfly device packaging process, coupling our self-developed single-mode 980nm semiconductor laser chip with a specially designed wedge lens fiber. Fiber Bragg grating, and thermal management technology were employed to ensure stable lock wave performance within a temperature range of -40 to 75°C, and a working current of 900 to 1800 mA. The spectral width is <0.5nm, the side-mode rejection ratio exceeds 25 dB, and the in-band power ratio surpasses 95%. The module delivers a single-mode output power exceeding 1.3 W and exhibits a low power stability of no more than 3.5% at a low power of 30 mW. The module features high single-mode output power, low power stability, narrow spectral width, and high edge-mode rejection ratio. After 2000 hours of high-current aging test and reliability verification, all module samples still maintain stable output power, and passed the verification of Telcordia GR-468-CORE. The successful development of this product fills the gap in the field of high-power single-mode 980nm semiconductor laser pump modules in China. It is expected to play an important role in the fields of optical communication systems, laser sensing and scientific research applications.
Improving the power and efficiency of 9xx-nm broad-area laser diodes reduces the cost of laser systems and expands applications. LDs with more than 25 W output power combined with power conversion efficiency (PCE) above 65% can provide a cost-effective high-power laser module. We report a high output power and high conversion efficiency laser diode operating at 915 nm by investigating the influence of the laser internal parameters on its output. The asymmetric epitaxial structure is optimized to achieve low optical loss while considering high internal efficiency, low series resistance, and modest optical confinement factor. Experimental results show an internal optical loss of 0.31 cm-1 and internal efficiency of 96%, in agreement with our simulation results. Laser diodes with 230 μm emitter width and 5 mm cavity length have T0 and T1 characteristic temperatures of 152 and 567 K, respectively. The maximum power conversion efficiency reaches 74.2% at 5 °C and 72.6% at 25 °C, and the maximum output power is 48.5 W at 48 A (at 30 °C), the highest reported for a 9xx-nm single emitter laser diode. At 25 °C, a high PCE of 67.5% is achieved for the operating power of 30 W at 27.5 A, and the lateral far-field angle with 95% power content is around 8°. Life test results show no failure in 1200 hours for 55 laser diodes. In addition, 55.5 W output was achieved at 55 A from a laser diode with 400 μm emitter width and 5.5 mm cavity length. A high PCE of 64.3% is obtained at 50 W with 47 A.
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