Our primary goal is to significantly enhance the output power of broad-area Laser Diodes (LDs) for improved cost-effectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 µm, achieving a Continuous-Wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in Quasi-Continuous-Wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration.
Semiconductor Laser Diodes (LDs) generate high output powers with high power conversion efficiencies. While broad-area LDs are favored for high-power applications, narrow-waveguide LDs are in demand for their single-mode characteristics. However, LDs suffer from device failures caused by Catastrophic Optical Damage (COD) due to elevated self-heating at high operating currents. It is critical to understand the COD mechanism in these devices to enhance their reliability and operating output power. In this study, we investigated the self-heating and temperature characteristics of LDs with varying waveguide widths to uncover the cause of their failure mechanism. We assessed the performance, junction, and facet temperatures of the narrow (W=7 μm) and broad waveguide (W=100 μm) LDs. The narrower waveguide LDs achieved and operated at higher output power densities but, surprisingly, maintained lower junction and facet temperatures. Additionally, we employed a thermal simulation model to analyze heat transport characteristics versus LD waveguide widths. The simulation results showed that narrower waveguide LDs exhibit improved three-dimensional heat dissipation, resulting in reduced junction and facet temperatures and, thus, enhanced reliability. Our simulations align well with the experimental data. The findings demonstrate a transition in heat dissipation characteristics from broad to narrow waveguide behavior at approximately 50 μm width. These results clarify the fundamental reasons behind the superior reliability of narrower waveguide LDs and provide valuable guidance for LD thermal management.
We have developed a high-power, high-reliability single-mode 980nm semiconductor laser pump module for all-optical networks in the optical communication industry, including terrestrial long-distance optical fiber communication, submarine optical cables, and satellite communication. This module serves as the core key component of Erbium-Doped Fiber Amplifiers (EDFA). To achieve an 80% coupling efficiency, we utilized the 14-pin butterfly device packaging process, coupling our self-developed single-mode 980nm semiconductor laser chip with a specially designed wedge lens fiber. Fiber Bragg grating, and thermal management technology were employed to ensure stable lock wave performance within a temperature range of -40 to 75°C, and a working current of 900 to 1800 mA. The spectral width is <0.5nm, the side-mode rejection ratio exceeds 25 dB, and the in-band power ratio surpasses 95%. The module delivers a single-mode output power exceeding 1.3 W and exhibits a low power stability of no more than 3.5% at a low power of 30 mW. The module features high single-mode output power, low power stability, narrow spectral width, and high edge-mode rejection ratio. After 2000 hours of high-current aging test and reliability verification, all module samples still maintain stable output power, and passed the verification of Telcordia GR-468-CORE. The successful development of this product fills the gap in the field of high-power single-mode 980nm semiconductor laser pump modules in China. It is expected to play an important role in the fields of optical communication systems, laser sensing and scientific research applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.