Overlay process control is a critical aspect of integrated circuit manufacturing. Advanced DRAM manufacturing overlay error budget approaches the sub-2nm threshold, including all sources of overlay error: litho processing, non-litho processing, metrology error, etc. Overlay measurement quality, both for accuracy and robustness, depends on the metrology system and its recipe setup. The optimal configuration depends on the layer and materials involved. Increased flexibility of metrology setup is of paramount importance, paired with improved methods of recipe optimization.
Both optical image-based overlay (IBO) and scatterometry diffraction overlay (SCOL®) are necessary tools for overlay control. For some devices and layers IBO provides the best accuracy and robustness, while on others SCOL provides optimum metrology. Historically, wavelength selection was limited to discrete wavelengths and at only a single wavelength. At advanced nodes IBO and SCOL require wavelength tunability and multiple wavelengths to optimize accuracy and robustness, as well as options for polarization and numerical aperture (NA). In previous studies1,2,3 we investigated wavelength tunability analysis with landscape analysis, using analytic techniques to determine the optimal setup. In this report we show advancements in the landscape analysis technique for IBO through both focus and wavelength, and comparisons to SCOL. A key advantage of imaging is the ability to optimize wavelength on a per-layer basis. This can be a benefit for EUV layers in combination with those of 193i, for example, as well as other applications such as thick 3D NAND layers. The goal is to make accurate and robust overlay metrology that is immune from process stack variations, and to provide metrics that indicate the quality of metrology performance. Through both simulation and on-wafer advanced DRAM measurements, we show quantitative benefits of accuracy and robustness to process stack variability for IBO and SCOL applications.
Methodologies described in this work can be achieved using Archer™ overlay metrology systems, ATL™ overlay metrology systems, and 5D Analyzer® advanced data analysis and patterning control solution.
Shrinking on-product overlay (OPO) budgets in advanced technology nodes require more accurate overlay measurement and better measurement robustness to process variability. Pupil-based accuracy flags have been introduced to the scatterometry-based overlay (SCOL) system to evaluate the performance of a SCOL measurement setup. Wavelength Homing is a new robustness feature enabled by the continuous tunability of advanced SCOL systems using a supercontinuum laser light source in combination with a flexible bandpass filter. Inline process monitoring using accuracy flags allows for detection, quantification and correction of shifts in the optimal measurement wavelength. This work demonstrates the benefit of Wavelength Homing in overcoming overlay inaccuracy caused by process changes and restoring the OPO and residual levels in the original recipe.
As semiconductor technology nodes keep shrinking, ever-tightening on-product overlay (OPO) budgets coupled with continuous process development and improvement make it critical to have a robust and accurate metrology setup. Process monitoring and control is becoming increasingly important to achieve high yield production. In recently introduced advanced overlay (OVL) systems, a supercontinuum laser source is applied to facilitate the collection of overlay spectra to increase measurement stability. In this paper, an analysis methodology has been proposed to couple the measured overlay spectra with overlay simulation to extract exact process information from overlay spectra. This paper demonstrates the ability to use overlay spectra to capture and quantify process variation, which in turn can be used to calibrate the simulation stacks used to create the SCOL (scatterometry-based overlay) and AIM overlay metrology targets, and can be fed into the fab for process monitoring and improvement.
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