Mr. Harald Braun Profile

Harald Braun

at Univ Regensburg

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Author

Publications (6)

Proceedings Article | 16 February 2009 Paper

Nitride laser diode arrays

K. Holc, M. Leszczynski, T. Suski, R. Czernecki, H. Braun, U. Schwartz, P. Perlin

Proceedings Volume 7216, 721618 (2009) https://doi.org/10.1117/12.802758

KEYWORDS: Semiconductor lasers, Near field, Near field optics, Gallium nitride, Laser damage threshold, Cladding, Spectroscopy, Semiconductors, CCD cameras, Imaging systems

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Proceedings Article | 3 February 2009 Paper

Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Harald Braun, Stephan Rogowsky, Ulrich Schwarz, Stefanie Brüninghof, Alfred Lell, Uwe Strauß

Proceedings Volume 7230, 72300F (2009) https://doi.org/10.1117/12.807454

KEYWORDS: Near field, Modes of laser operation, Superposition, Near field optics, Waveguides, Semiconductor lasers, Gaussian beams, Refractive index, Laser beam propagation, Near field scanning optical microscopy

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Proceedings Article | 8 May 2008 Paper

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Harald Braun, Dominik Scholz, Tobias Meyer, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 69971U (2008) https://doi.org/10.1117/12.781314

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Temperature metrology, Modes of laser operation, Near field optics, Near field scanning optical microscopy, Optical simulations, Thermal effects, Superposition

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Proceedings Article | 8 May 2008 Paper

Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate

Tobias Meyer, Harald Braun, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 699708 (2008) https://doi.org/10.1117/12.781277

KEYWORDS: Silicon carbide, Gallium nitride, Semiconductor lasers, Laser damage threshold, Quantum wells, Optical simulations, Waveguides, Electroluminescence, Indium gallium nitride, Aluminum

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 8 February 2007 Paper

Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range

Ulrich Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai

Proceedings Volume 6485, 648506 (2007) https://doi.org/10.1117/12.705867

KEYWORDS: Semiconductor lasers, Quantum wells, Indium gallium nitride, Near ultraviolet, Indium, Electrons, Optical simulations, Standards development, Gallium, Data modeling

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Showing 5 of 6 publications

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