Regular check of blood creatinine level is very important as it is a measurement of renal function. Therefore, the objective of this study is to develop a simple and reliable creatinine biosensor based on admittance measurement for precise determination of creatinine. The creatinine biosensor was fabricated with creatinine deiminase immobilized on screen-printed carbon electrodes. Admittance measurement at a specific frequency ranges (22.80 - 84.71 Hz) showed that the biosensor has an excellent linear (r2 > 0.95) response range (50 - 250 uM), which covers the normal physiological and pathological ranges of blood creatinine levels. Intraclass correlation coefficient (ICC) showed that the biosensor has excellent reliability and validity (ICC = 0.98). In conclusion, a simple and reliable creatinine biosensor was developed and it is capable of precisely determining blood creatinine levels in both the normal physiological and pathological ranges.
This paper proposes dual-mode buffer direct injection (BDI) and direct injection (DI) readout circuit design. The DI readout circuit has the advantage of being a simple circuit, requiring a small layout area, and low power consumption. The internal resistance of the photodetector will affect the photocurrent injection efficiency. We used a buffer amplifier to design the BDI readout circuit since it would reduce the input impedance and raise the injection efficiency. This paper will discuss and analyze the power consumption, injection efficiency, layout area, and circuit noise. The circuit is simulated using a TSMC 0.35 um Mixed Signal 2P4M CMOS 5 V process. The dimension of the pixel area is 30×30 μm. We have designed a 10×8 array for the readout circuit of the interlaced columns. The input current ranges from 1 nA to 10 nA, when the measurement current is 10 pA to 10 nA. The integration time was varied. The circuit output swing was 2 V. The total root mean square noise voltage was 4.84 mV. The signal to noise ratio was 52 dB, and the full chip circuit power consumption was 9.94 mW.
This paper discusses a capacitor transimpedance amplifier (CTIA) designed for an infrared readout circuit. The CTIA has better gain control, high dynamic range, a stability bias point and low impedance. It applies a short-wave detector and small current source because input impedance is very small in an amplifier feedback mechanism. This research on a capacitor transimpedance amplifier (CTIA) is designed for an infrared readout circuit. It is designed, simulated and laid out using the TSMC 0.35um 2P4M CMOS 5V process. The clock rate operates at 3MHz. Layout area is 30umX30um and the array size is 20X16. The simulation current sets 0.01nA~1.3nA. The output swing is 2.8V and power consumption is 10.1 mW according to the measurement results.
This study proposes a solution for an excessive dark current by a sharing capacitor, which avoids output signal
distortion due to integration voltage saturation. Integration capacitance can be changed by adding a switch in the pixel
circuit, which will increase the capacitance by two times the original. This circuit also provides output functions of either
single-band or dual-band by switching to different sensor. This integrated readout circuit design adopts the TSMC
0.35um 2P4M CMOS 5V process, run on a 5V power supply and operated at a 3MHz clock rate. The dual-band pixel
circuit uses an interlace structure, the pixel circuit areas of the two wavelengths are both 30um x 30um. The mid-wave
and long-wave sensor currents are from 1nA to 2nA and 6nA to 8nA, respectively, and output swing is 2.8V.
This paper discusses about a readout circuit for Dual-Band Quantum Well Infrared Photo-detectors (DBQWIP)
interlaced focal plane array infrared image system. In this research, we will present the study of modified dark-current
cancellation circuit. The sensing photo-current from 1nA to 10nA of long-wave infrared signal, mid-wave infrared
photo-current is about 100pA to 1nA, the dark current is set up to 100nA. The area of unit pixel is 30×30μm2 . The 8×6
focal-plane array is designed by using TSMC 0.35μm 2P4M CMOS process. This work has 3.3V power supply and
readouts data at 2.5MHz clock rate. The simulated output voltage range of LWIR and MWIR photo-current are 0.95v and
0.76v, respectively.
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