Background: Natural physical phenomena occurring at length scales of a few nm produces variation in many aspects of the EUV photoresist relief image: edge roughness, width roughness, feature-tofeature variability, etc. 1,2,3,4. But the most damaging of these variations are stochastic or probabilistic printing failures 5, 6. Stochastic or probabilistic failures are highly random with respect to count and location and occur on wafers at spectra of unknown frequencies. Examples of these are space bridging, line breaking, missing and merging holes. Each has potential to damage or destroy the device, reducing yield 6, 10. Each has potential to damage or destroy the device, reducing yield 6, 10. The phenomena likely originates during exposure where quantized light and matter interact1 . EUV lithography is especially problematic since the uncertainty of energy absorbed by a volume of resist is much greater at 13.5 nm vs. 248 nm and 193 nm. Methods: In this paper, we use highly accelerated rigorous 3D probabilistic computational lithography and inspection to scan an entire EUV advanced node layout, predicting the location, type and probability of stochastic printing failures.
In this article the recent progress in the elements of EUV lithography is presented. Source power around 205W was demonstrated and further scaling up is going on, which is expected to be implemented in the field within 2017. Source availability keeps improving especially due to the introduction of new droplet generator but collector lifetime needs to be verified at each power level. Mask blank defect satisfied the HVM goal. Resist meets the requirements of development purposes and dose needs to be reduced further to satisfy the productivity demand. Pellicle, where both the high transmittance and long lifetime are demanded, needs improvements especially in pellicle membrane. Potential issues in high-NA EUV are discussed including resist, small DOF, stitching, mask infrastructure, whose solutions need to be prepared timely in addition to high-NA exposure tool to enable this technology.
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