200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation
surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective
enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.
P-type hydrogenated nanocrystalline diamond (NCD) film on silicon substrate was realized by microwave plasma
chemical vapor deposition (MPCVD) method followed by hydrogen plasma treatment. And then a metal-semiconductor
field-effect transistor (MESFET), where ohmic contacts as source and drain were formed by depositing gold and
Schottky gate contact with a gate length Lg of 10 μm was formed by depositing metal aluminium, was successfully
fabricated with surface p-channel based on the above NCD film. Atomic force microscopy (AFM), scanning electron
microscopy (SEM), Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) were applied to
characterize the structure and the surface morphology of the hydrogenated NCD film. The drain source current-voltage
(IDS-VDS) characteristics showed enhancement mode operation of the surface p-channel MESFET could be obtained
despite the Al gate was crossing many grain boundaries. And a maximum channel current IDS (max) = 25.8 μA at VGS= -2.0
V with VDS = -10 V, were obtained.
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