CdZnTe thick films were prepared by using close-spaced sublimation (CSS) method. The effects of metal catalytic layer on the performance of CdZnTe thick film was examined. The findings demonstrate that the Au catalytic buffer layer, in comparison to the Al metal layer, significantly affects the growth rate, grain size, and surface morphology of the CdZnTe thick film. The properties of the CdZnTe thick film is considerably impacted by the thickness of the Au layer.
High-quality CdZnTe (CZT) films were fabricated using the radio frequency magnetron sputtering technique. Ultraviolet (UV) photodetectors based on CZT films were fabricated with gallium-doped zinc oxide (GZO) and gold electrodes. The electrodes and film thickness on the performance of CZT film UV photodetectors was studied. The results indicate that GZO electrodes can form good ohmic contact with CZT, thereby enhancing the sensitivity and response of CZT photodetectors. An increase in film thickness improves the film quality, resulting in enhanced performance of CZT film UV photodetectors.
In this work, Al-doped Ga2O3 thin films were prepared on quartz substrates using radio frequency magnetron co-sputtering, and the influence of Al2O3 sputtering power on properties of the films was investigated. It was found that the Al content in the films increased with the increase in sputtering power, reaching 30.63 at.% at a sputtering power of 100 W. All the films prepared exhibited highly transparent in the visible and near-ultraviolet regions (>85%). In comparison to undoped Ga2O3 films, Al-doped Ga2O3 films exhibit a pronounced blue shift in their absorption edges, with the degree of blue shift increasing as the sputtering power is raised.
Efficient energy transport is highly desirable for organic semiconductor (OSC) devices such as photovoltaics, photodetectors, and photocatalytic systems. However, photo-generated excitons in OSC films mostly occupy highly localized states over their lifetime. Energy transport is hence thought to be mainly mediated by the site-to-site hopping of localized excitons, limiting exciton diffusion coefficients to below ~10-2 cm2/s with corresponding diffusion lengths below ~50 nm. Here, using ultrafast optical microscopy combined with non-adiabatic molecular dynamics simulations, we present evidence for a new highly-efficient energy transport regime: transient exciton delocalization, where energy exchange with vibrational modes allows excitons to temporarily re-access spatially extended states under equilibrium conditions. In films of highlyordered poly(3-hexylthiophene) nanofibers, prepared using living crystallization-driven self-assembly, we show that this enables exciton diffusion constants up to 1.1 ± 0.1 cm2/s and diffusion lengths of 300 ± 50 nm. Our results reveal the dynamic interplay between localized and delocalized exciton configurations at equilibrium conditions, calling for a re-evaluation of the basic picture of exciton dynamics. This establishes new design rules to engineer efficient energy transport in OSC films, which will enable new devices architectures not based on restrictive bulk heterojunctions.
Fluorescence-filled photonic crystal multi-layer films are widely used in laser, sensing, display and other fields due to their photonic bandgap and fluorescence emission properties. In this paper, photonic crystals filled with carbon quantum dots from different precursors have been prepared. It is found that photonic crystals filled with fluorescent carbon quantum dots have optically variable properties excited by ultraviolet light. The optically variable properties of photonic crystals filled with carbon quantum dots at emission peaks of 616, 510 and 450 nm were studied. The fluorescent properties of carbon quantum dots at emission peaks of 616 nm were the best compared to 510 nm and 450 nm. The effects of hole radius R, hole gap d and hole depth h on optically variable properties of fluorescent filled photonic crystals were investigated using 510 nm carbon quantum dots. The results showed that the optically variable properties of fluorescent photonic crystals is strongest when R=400 nm, d=1.5 μm and h=200 nm.
Graphene (rGO) was fabricated by modified Hummers method and a reducing process. Conductive polymer/graphene films were obtained by scalpel technology and used as photocathode in CdS quantum dot-sensitized solar cell (QDSSC). Polymers used in this paper were ethyl cellulose (EC), polyphenyl vinyl (PPV) and polyvinyl butyral (PVB), respectively. The obtained composite films were investigated by X-ray diffraction, Raman spectroscopy technology and scanning electron microscope (SEM). The photoelectric properties of QDSSCs were tested under AM 1.5 irradiation. Test results show that the film performance of the EC/rGO and PPV/rGO photocathode have been improved effectively. Power conversion efficiency (PCE) of the relative QDSSCs under AM 1.5 irradiation were 0.81% and 0.86%, respectively.
KEYWORDS: Thin films, Sputter deposition, Crystals, Temperature metrology, Scanning electron microscopy, Solar energy, X-rays, Spectroscopy, X-ray diffraction, Chemical analysis
Cu2S thin films have been deposited on CdS/ITO (In2O3:Sn) substrates with various substrate temperatures by DC magnetron sputtering method. The effects of substrate temperature on the crystallization behavior and morphology are studied. Chemical composition of the films is confirmed by energy dispersive X-ray (EDX) spectroscopy. X-ray diffraction (XRD) analysis of the films reveals they have polycrystalline chalcocite structure with (110) texture. Field emission scanning electron microscopy (FESEM) show the crystalline nature of the films at higher substrate temperature, which is in accordance with XRD measurements. Stoichiometric analysis exhibits element composition with Cu/S concentrations ratio equal to 2 approximately.
A heterojunction with good rectifying properties in a wide temperature range from 20 K to 300 K was fabricated simply by depositing an as-grown La0.9Hf0.1MnO3 (LHMO) film on a commercial 0.7 wt% Nb-doped SrTiO3 single crystal substrate using pulsed laser deposition technique. The current-voltage behavior of the LHMO/STON is measured under applied magnetic fields varying between 0 and 5 T. The heterojunction shows a remarkable magnetoresistance which depends on both the temperature and bias voltages. The sign of the magnetoresistance as function of temperature at either forward or reverse bias voltage is extensively studied by the filling of electrons in the eg and t2g band. The good rectifying behaviors, the magnetic tunable properties and the maximum magnetoresistance obtained at room temperature make this simple heterojunction promising for practical applications.
CdZnTe thin films were deposited on FTO (SnO2: F)-coated glass substrates by close-spaced sublimation method and then annealed under three different conditions. The influences of the three thermal treatments on the structure, morphology, composition and optical properties of the CdZnTe thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy disperse spectra (EDS) and photoluminescence (PL) spectroscopy. The XRD results show that the films are (111) preferred orientation. The SEM and PL spectroscopy results show the better crystalline quality after any of three thermal treatments than that of as-deposited sample. The EDS analysis indicates that the Zn composition decreases for the sample with CdCl2 annealing, but increases for the sample annealing directly and ZnCl2 annealing. The same results are also obtained by XRD and PL spectroscopy.
With the advantages of excellent electrical properties, high catalytic activity and low-cost preparation, Graphene is one of the most expected carbon materials to replace the expensive Pt as counter electrodes for dye-sensitized solar cells (DSSCs). In this paper, graphene counter electrodes were obtained by simple doctor-blade coating method on fluorine tin oxides (FTOs). The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Then the low-cost graphene electrodes were applied in typical sandwich-type DSSCs with TiO2 or ZnO as photoanodes, and their photoelectric conversion efficiency (η) were about 4.34% and 2.28%, respectively, which were a little lower than those of Pt electrodes but much higher than those of graphite electrodes. This law was consistent with the test results of electrochemical impedance spectroscopy (EIS). Low-cost graphene electrodes can be applied in DSSCs by process optimization.
CsMX3(M = Sn, Pb; X = Cl, Br, I) are strong candidates for the fast high energy irradiation detectors, ionic conductors, and optoelectronic devices. There are many experimental and theoretical investigations devoted to the study of perovskites ABX3 (A is a cation with different valence, B is a transition metal and X is oxides, halides or chlorides). But there is no systematic study of CsMX3 using HSE approximation particularly. In this paper, the band structures, density of states and optical properties of CsMX3(M = Sn, Pb; X = Cl, Br, I) have been studied by first-principles calculations using both the hybrid functional (HSE) approximation and the PBE-GGA approximation. The results of both approximations are compared with the experimental values. The results of HSE are closer to the experimental values. The changes of properties have been founded by comparing the band structures, density of states and optical properties of this series of thin film materials respectively. The trend of impact on these properties by replace elements has also been found. Our results provide a basis for the design of specific performance thin film materials.
Semiconductor detector that incorporate neutron reactive material within the same detector demonstrates a new method for neutron dosimetry and boron neutron reactive therapy seems to be a promising treatment. Boron films were deposited on single crystalline silicon, glass, and CVD diamond film by magnetron sputtering, close-space sublimation and vacuum evaporation. The properties of the samples were characterized by SEM, which shows vacuum evaporation method is suitable for depositing high quality boron films.
Due to different oriented polycrystalline HgI2 films show different properties. In this paper the properties of different
oriented HgI2 films have been investigated by scanning electron microscopy, X-ray diffraction and current-voltage
measurements. The measured results indicate HgI2 films are of high quality and the properties of the (001)-oriented HgI2 film are better than those of the free oriented ones. The dark current of the (001)-oriented HgI2 film is 0.5 nA with an
applied bias voltage of 40 V. The current of (001)-oriented HgI2 film keeps unchanged during measurement.
200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation
surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective
enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.
The highly (001)-orientated α-HgI2 film was deposited by hot wall physical vapor deposition (HWPVD) technology.
The scanning electron microscopy (SEM), X-ray diffraction (XRD), dark current versus applied voltage and capacitance-frequency
characteristics analysis showed that the film was compactly formed by separated columnar monocrystallines
with uniform orientation along c-direction and with high resistivity (2.5×1012Ω•cm) and low dark current.
Nanocrystalline diamond(NCD) films with a mean surface roughness of 23.8 nm were grown on silicon substrates in a
hot filament chemical vapor deposition(HFCVD) system. Then,
Zn1-xLixO (x=0, 0.05, 0.10, 0.15) films were deposited on
these NCD films by radio-frequency(RF) reactive magnetron sputtering method. When x was 0.1, the Li-doped ZnO film
had a larger resistivity more than 108Ω•cm obtained from Hall effect measurement. All the Zn1-xLixO films had a strong
c-axis orientation structure determined by X-ray diffraction (XRD). The above results suggested that the Li-doped ZnO
film/NCD structure prepared in this work was attractive for the application of high frequency surface acoustic wave
(SAW) devices.
Tin sulfide (SnS) is one of promising candidate materials for low-cost thin film solar cells because of its high absorption
coefficient and suitable band-gap. The aim of this paper is to study the properties of doped-SnS thin films prepared by
vacuum evaporation. Sb2O3 was used as the doping source (the weight ratio of Sb2O3 to SnS in the range from 0.1% to
0.8%). And then the Sb2O3-doped SnS thin films were annealed in the hydrogen
atmosphere at different temperatures and
times. The structure of all the samples was characterized by X-ray diffraction (XRD). The electrical properties of SnS
thin films were investigated as well. From the results, the optimum doping content of Sb2O3
was 0.2% in weight, and the
resistivity of the doped-SnS film was 42Ω•cm while that of the pure-SnS film was 99Ω•cm. In addition, the film
resistivity of Sb2O3-doped SnS film decreased to 24Ω•cm with the best annealing conditions of 400°C and 3 hours.
Diamond films with various grain sizes are grown on silicon substrates by hot-filament chemical vapor deposition
method. Scanning electron microscopy (SEM) measurement shows that the films consist of diamond grain with an
average crystallite size of 1.4-0.1μm. The optical and structural properties of diamond films are investigated by
spectroscopic phase modulated ellipsometer in the energy range of 0.8-1.5eV. A three-layer model, Si/diamond
film/diamond film + void/, is applied to diamond film based on Bruggeman effective-medium approximation and New
Amorphous dispersion formula which is a rewrite of Forouhi-Bloomer formulation. By fitting spectroscopic
characteristics (Ψ,Δ) with Levenberg-Marquardt regression algorithm, the energy band gap and refractive index are
obtained, along with the film thickness, bulk void fraction and roughness layer. The study indicates that both energy
band gap and refractive index decrease when grain size reduces due to the raise of disorder sp2 bonded carbon. The result
on the Raman scattering measurement is consistent with the fitting result of spectroscopic ellipsometer.
KEYWORDS: Tin, Thin films, Scanning electron microscopy, Temperature metrology, Solar cells, Thin film solar cells, Diffraction, Crystals, X-ray diffraction, Optical properties
Tin sulfide (SnS) thin films for solar cells were deposited by vacuum evaporation at different substrate temperatures in a
range of 20~200°C. The films were characterized with X-ray diffraction (XRD) and scanning electron microscopy
(SEM) for structural analysis. The electrical and optical properties were also investigated. Under the substrate
temperature of 150°C, the obtained SnS thin film was in orthorhombic structure with a grain size of 0.5 μm and
composition of Sn:S =1:1. The measurement results from hot probe method showed p-type nature for the deposited
films. Dark-conductivity and photo-conductivity were 0.01Ω-1•cm-1 and 0.08Ω-1•cm-1, respectively. The optical band-gap
energy of the films was estimated to be 1.402 eV.
Copper phthalocyanine (CuPc) is an important versatile organic material. It has attracted more and more attention
because of its unusual stability and photoelectric properties. Copper phthalocyanine (CuPc) films, grown by vacuum
sublimation, were characterized with X ray diffraction (XRD), Raman and UV-VIS spectrometry. CuPc/Aluminum (Al)
Schottky solar cells were studied by varying the thickness of the CuPc layer from 30 nm to 130 nm. Optimum current
density-voltage characteristics of ITO/CuPc/Al was obtained for 110 nm thick CuPc layer, which revealed the Short
circuit current densities of 0.086 mA/cm2 and the Open circuit voltages of 300 mV. Bathocuproine (BCP), tris (8-hydroxyquinolato) aluminum and LiF were used respectively as buffer layer to discuss their influences on the electrical
characteristics of ITO/CuPc/Al Schottky solar cells. It was found that the insertion of a thin buffer layer would improve
the performance except LiF.
A hot filament chemical vapor deposition (HFCVD) apparatus, combined with a cyro-cooled superconductor magnet,
were recently developed. Nanocrystalline diamond (NCD) films were prepared by above HFCVD apparatus either with
or without high magnetic field. Surface morphologies of these films were characterized by means of atomic force
microscope (AFM). The results indicated that the mean surface roughness and grain size of these films decreased when
the magnetic field varied from 0T to 4T. From Raman scattering measurement, all films prepared either with or without
high magnetic field exhibit NCD features. These NCD features of the sample prepared with 4T magnetic field was
obviously pronounced. The structure of these films was also investigated by X-ray diffraction (XRD).
Potentially low cost and large area polycrystalline mercuric Iodide (HgI2) is one of the preferred materials for the
fabrication of room temperature X-ray and gamma-ray detectors. In this paper, the technique of fabricating
polycrystalline HgI2 detectors was studied and the energy resolution of 13.1% for 5.5 MeV 241Am α particles at room
temperature was obtained for the first time. The optimal choice of particle injecting from negative interface enhances the
collection efficiency.
A heterostructure of nanocrystalline diamond film / n-Si was fabricated successfully, where the un-doped p-type
nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD)
technology. The structure and morphology of the NCD film were analyzed by Raman spectroscopy, X-ray
diffraction (XRD) and scanning electron microscopy (SEM). I-V characteristic of the p-NCD/n-Si heterojunction
indicated that this structure was rectifying in nature with a turn-on voltage of ~0.5V. The p-NCD/n-Si heterostructure
was also used for UV detector applications. Operating at a bias voltage of 10V, this photodetector showed a significant
discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.
The structure, electrical and optical properties of nano-crystalline diamond (NCD) films deposited by hot-filament
chemical vapor deposition (HFCVD) method, are reported. The influence of the carbon concentration during the film
deposition on the Raman scattering, optical gap, optical constants (n and k) and dark-current is investigated. Under a
higher carbon concentration during deposition, the NCD film obtained with a smaller grain size, has a lower optical gap,
refractive index and electrical resistivity. These changes with the carbon concentration are attributed to the high amount
of sp2 bonded carbons and other non-diamond phase, which is confirmed by Raman scattering measurements.
Nanocrystalline diamond (NCD) films have been deposited by hot filament chemical vapour deposition (HFCVD) from
acetone/hydrogen gas mixtures on a variety of substrates such as silicon wafers and polycrystalline diamond. The
influence of the chemical nature of the substrate, the roughness, and the pretreatment of the substrates on the nucleation
and the bulk structure of the NCD films are investigated. By means of X-ray diffraction (XRD) and Raman spectroscopy
it is shown that the bulk properties of the films are not affected by the status of the substrate although these have a strong
influence on the nucleation behaviour.
Highly oriented polycrystalline α-HgI2 thick films are fabricated by physical vapor deposition method under the
conditions of 59KHz ultrasonic wave and relatively lower source temperature of 80°C. The ultrasonic wave is used in the
process of physical vapor deposition films preparation for the first time. With the effect of ultrasonic wave, the film
quality and the growth rate can be obviously improved. The growth mechanism as well as impacts of ultrasonic wave is
also discussed.
The free-standing diamond films with a smooth and high quality nucleation side were prepared by hot filament chemical
vapor deposition (HFCVD) method. The nucleation side of the films had a mean surface roughness of 1.6nm.AlN films
were then deposited on the nucleation side of the above diamond films by radio-frequency (RF) reactive magnetron
sputtering method. The structure characteristics of AlN films deposited under different working pressure (p), sputtering
power (w) and sputtering plasma composition were studied. The optimized parameters for the growth of high c-axis
orientation AlN films were obtained: p=0.2Pa,w=600w and Ar/N2=3:1.Surface morphologies of AlN films deposited
under these parameter, tested by means of atomic force microscope (AFM), showed that the mean surface roughness was
about 4.1nm.It also had a strong c-axis orientation structure investigated by X-ray diffraction (XRD). All results above
suggested that the AlN/diamond structure prepared in this work was ideal for the application of high frequency surface
acoustic wave devices (SAW) device.
The effects of deposition conditions and annealing process on the optical properties of diamond films on silicon substrate grown by MPCVD method are investigated by infrared spectroscopic ellipsometry (2.5-12.5μm). Results indicate that the low nucleation temperature will be in favor of decreasing the infrared absorption at 3.5μm. The refractive index n of diamond films deposited under higher growth temperature will fluctuate weakly. After annealing in N2 atmosphere an obvious improvement of the infrared optical properties is also found. After annealing the value of k was about 10-12~10-15. However, for non-annealed diamond film, the value of k was about 10-3~10-14. After annealing the refractive index n increased and was close to that of single crystal Type IIa natural diamond.
CVD diamond film has many excellent features, which promotes its potential application in radiation detection. In this paper, one kind of 1x128 array detector was developed by using a free-standing (100) textured CVD diamond film with a thickness of 300µm. The charge collection efficiencies (η) and distances (d) of the detector were investigated by using 241Am α particles (5.5MeV), 60Co γ-rays (1.25MeV), 55Fe X-rays (5.9KeV), resulting that the CVD diamond detector boasts high η (>38%) and d (>115µm), among which the η and d of X-ray reaches 41.70% and 125µm, respectively.
A diamond film was grown on alumina ceramic by micro-wave plasma chemical vapor deposition (MPCVD) and was fabricated into an interdigited alpha-particle detector. By optimizing growth parameters in MPCVD, we found that under the conditions with carbon source (alcohol/hydrogen) concentration in 0.8% and deposition temperature at 850°C, the least content of sp2 and the best quality of diamond film could be obtained. Photocurrent under α-particle irradiation was in the range of 10-5~10-4A within one hundred voltages, and dark current was about 10-9~10-8A.
In this paper we report high quality [100]-oriented diamond films prepared by HFCVD using hydrogen as carrier gas and C2H5OH as carbon source for the first time. The surface morphology observed by SEM showed polycrystalline diamond films with [100] faced structure with an average grain size of ~20 μm. The Raman spectrum indicated sp3 bonding with a sharp peak at 1333 cm-1. The I-V characteristics obtained via Au contact were determined by semiconductor characterization system. The electrical resistivity of HFCVD [100]-oriented diamond film was ~3.0x1010Ω cm. The capacitance and dielectric loss of films were very small with the value of 2.0pF and 0.02, respectively, and almost had no dependence with the change of frequency in high frequencies.
The valuable properties of CVD diamond films used as micro-strip gas chamber (MSGC) substrate are presented and a gas detector with an area of 20x20mm2 was fabricated on a CVD diamond film whose resistivity ranges between 1010 and 1011Ω-cm. We systematically report the energy spectra generated by a 5.9keV55Fe X-ray source. The effects of high potential on the energy resolution are investigated and discussed in detail. A better energy resolution about 12.2% is obtained when MSGC filling with an argon+10%CH4 gas mixture operated at a drift potential of -1100V and a cathode voltage of -650V.
In this paper homogeneous and dense diamond films with good crystalline quality are successfully deposited on porous silicon surfaces by the microwave plasma assisted chemical vapor deposition method. Photoluminescence measurements show that the CVD diamond film-coated porous silicon has a weak shift of emission wavelength as compared with the stored porous silicon without a diamond film, and its PL intensity almost doesn't change with time. It means the diamond film can efficiently stabilize the PL wavelength and intensity of porous silicon and provide a better passivation effect. In addition, due to its well-known high hardness, the CVD diamond film can improve the mechanical strength of PS surface, and is therefore a promising candidate for passivation of porous silicon in the future.
Bombardments of hydrogen and boron ions are performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process. The size of (001) faces increases after hydrogen ion etching, while other grains are etched off. The surfaces of [001]- oriented films after boron dying are investigated by scanning electron microscope and cathodoluminescent (CL) spectra. The absence of the band-A emission in the CL spectra means a low density of dislocations in the films. It is the first time to indicate that the peak at 741.5 nm and the broad peak at around 575 and 625 nm in the CL spectra are reduced efficiently after boron doping in (001) polycrystalline diamond films. We propose that these phenomena could be explained in simple terms by a penetration or adsorption model through the lattice nets of the [001]-oriented surfaces.
[100]-textured diamond thin film on a rough and randomly oriented Al2O3 substrate has been achieved by MPCVD. The cyclic technique--the cyclic modulation of the H2 plasma (etching process) and CH4+H2 plasma (growing process)--has been applied during the growth stage with various etching/growth time ratios. The dependencies of properties and morphologies of the films on the etching time interval were well explained by the selective etching of hydrogen ions to non-[100]- oriented grains. The strong effects of different methane concentrations and substrate temperatures on the [100]-textured growth were also concluded. Growth mechanisms of [100]-textured diamond thin films on Al2O3 substrates were discussed based on the detailed results of Scanning Electron Microscopy, Raman Spectrum and X-ray Diffraction Spectrum.
Microstructure and optical properties of nitrogen doped hydrogenated carbon (a-C:H:N) film deposited by rf plasma enhanced chemical vapor deposition method were studied by AFM, Raman, FTIR and IRE spectrometer. Absorption intensities of the peaks CNH (1600 cm-1), CN (2200 cm-1) and NH (3250 cm-1) in the IR spectra increase with the ratio of flux N2/CH4. Raman spectra show the shape of D and G band of a-C:H:N film varies slightly with the increase of N content, which means the main structures of N doped films are still diamondlike carbon films. However Gaussian fit results show that G band widens and the peak shifts to the low wavenumber in Raman spectra is that amorphous C3N4 structure formed in the film. AFM topographies and LFM images of a-C:H:N film confirm the amorphous C3N4 exists as several ten nanometers particles in the film. IRE spectra analysis results show that refractive index of the film in infrared band (2 - 14 um) slightly decreases from 1.8 to 1.6 with increased nitrogen content in the films.
Two kinds of voltage-tunable-color triple layer organic light emitting diodes consisted of styryltriphenyamine SA and 8- hydroxyquinoline aluminum chalet Alq3 or laser dye DCM doped Alq3 as emission layers and oxadizole PBD as carrier confinement layer have been fabricated. They emit both from SA and Alq3 or DCM doped Alq3 and their emission color dependent on the applied voltage. The ratios of blue from SA and green or orange-red from Alq3 or Alq3:DCM increased with the increasing of applied voltage. Brightness current characteristic has been invest9iEnergy models have been assumed and the EL behaviors are explained.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.