200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation
surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective
enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.
Free-standing polycrystalline diamond films with a thickness of about 200 μm were grown by microwave plasma
chemical vapor deposition (MPCVD) method. Raman spectra indicated high quality diamond film of the nucleation
surface. AFM result indicated the nucleation surface was quite smooth with a mean surface roughness (RMS) of about 10
nm. The sheet carrier densities and sheet resistivities of hydrogenated nucleation surfaces of diamond film under
different annealing temperatures were investigated by Hall effect measurement. The sheet carrier density and sheet
resistivity remained in a relatively stable range until the annealing temperature above 200 ºC, and the sheet carrier
density dropped drastically and sheet resistivity rose sharply, achieving a sharp change at an annealing temperature of
250 °C. The ultra-violet Raman spectra and infrared spectra showed CHx stretching modes at the hydrogenated
nucleation surface, whereas almost little hydrogen incorporation on annealed sample.
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