Recently, Sn perovskite solar cell (Sn PVK PV) are attracting attention. However, the efficiency was still lower than that of Pb perovskite solar cells. Recently, the Sn PVK PVs with efficiency higher than 10% have been reported from several research groups. The crystal defects include the presence of Sn4+, Sn2+ defect, I- defect, the presence of Sn0, the interstitial I- and so on. In order to decrease these defect densities, we have proposed some processes such as addition of Ge2+ ion, introduction of ethylammonium cation into A site, and surface passivation of perovskite grain boundary with diaminoethane dilute solution. Our results on efficiency enhancement (13%) is explained by the conduction and valence band energy level against carrier trap depth. In addition, an inverted SnPb perovskite solar cells with 23.3% efficiency is discussed from the view point of optimization of energy alignment.
Certified efficiency of halogenated Pb-perovskite solar cells has reached 25.2 %. Because of the Pb usage restriction, researches on Pb free perovskite solar cells have been focused on. Halogenated Sn-perovskite is one of candidates for the Pb-free perovskite solar cells. In spite of the similarities of the electronic properties between Pb-perovskite and Sn-perovskite, the efficiency of the Sn-perovskite solar cell was still about 10%, which is far below that of Pb-perovskite solar cells. We report Ge ion doped Sn-perovskite solar cells (Pb free) with 13% efficiency by optimizing A site cations in ASnI3 composition and surface passivation.
We demonstrate a low-concentrated solar-pumped fiber laser with all-inorganic cesium lead halide perovskite quantum dots (QDs), which function as a sensitizer. The perovskite QDs exhibit substantial advantages for solarpumped laser applications because of their broad absorption and narrow emission spectra with high quantum yield. We successfully tuned the peak emission wavelength of the perovskite QDs by altering the I/Br ratio in order to achieve spectral overlap with Nd3+ ions, which have been widely used as a laser medium for solar-pumped lasers. The measurement results show that the laser output power is highly sensitive to the peak emission wavelength of the QDs. Although our synthesized QDs have a quantum yield of approximately 65%, which is less than that of conventional organic dyes, the laser performance was comparable because the fluorescence spectrum is tailored to the Nd3+ absorption band.
Despite the high-efficiency of these lead-based perovskite solar cells, the problem associated from the toxic nature of lead has open a new research direction which focuses on lead-free perovskite materials. As an alternative, tin has been proposed to replace lead. The highest efficiency obtained with Sn only perovskite was 9 % which was based on 2D and 3D mixture of FASnI3. However, Sn-based perovskites are known to have low stability in air. The use of germanium-based perovskite in solar cell was first realized by Krishnamoorthy et. al. The measured solar cell performance was notably low, 0.11 % for CsGeI3 and 0.20 % for MAGeI3. A theoretical study exploring hybrid tin and germanium perovskite showed that it is possible to prepare a stable Sn-Ge perovskite material that absorbs the sunlight spectrum. In this study, a new type of SnGe mixed metal perovskite solar cells are reported with enhanced efficiency and stability. In this report, FA0.75MA0.25Sn1-xGexI3 (abbreviated as SnGe(x)-PVK) were used for the mixed metal SnGe perovskite. XRD spectra showed that the structure is perovskite.
The structure of Ge-doped Sn perovskite was also discussed from the view point of band gap, conduction and valence band level, XPS analysis, and the urbach energy. It can be concluded that most of the Ge atoms passivate the surface of the Sn perovskite (graded structure).For SnGe(0)-PVK device, the averageJsc was 17.61 mA/cm2, VOC was 0.46 V, FF was 0.41 and PCE of 3.31 %. Upon doping with 5 wt% of Ge, the JSC increased up to 19.80 mA/cm2, FF improved up to 0.55 with an overall efficiency of 4.48 %. Upon increasing the Ge content more than 10wt%, all the photovoltaic parameters decreased significantly which resulted in an efficiency as low as 0.80 % for SnGe(0.2)-PVK device. After optimization, 7.75% of SnGe(5)-PVK device is reported. Significant effect on Ge doping was seen in the enhancement of the stability. The stability in air has been improved significantly with the Ge doping, retaining 80 % of its original performance, remarkable stability enhancement, compared with 10 % retention for non-doped sample. This work provides a platform for further research on lead-free Sn-Ge based perovskite solar cells.
Absorption edge of perovskite (PVK) solar cells consisting of MAPbI3 is 800nm. According to our simulation, light harvesting in the area of near IR is also necessary for enhancing the efficiency more. We have already reported that mixed metal perovskite (MAPbSnI3) shows photo-conversion in IR region (1-6). The short circuit current (Jsc) was high, reaching to 30 mA/cm2 because of the wide range of light harvesting. However, the open-circuit voltage (Voc) was lower than 0.3 V and the estimated voltage loss was 0.6-0.7 V, which was much larger than that of MAPbI3 (0.4 V), suggesting the presence of high density charge recombination center. We found that Ti-O-Sn bonds formed at the interface between Tiania and MAPbSnI3 layer, create trap states, resulting in increasing charge recombination at the interfaces. The surface trap density and the trap depth was quantitatively monitored by thermally stimulated current methods. When the Ti-O-Sn linkage was formed at the interface between TiO2 and PVK, the trap density increased by one order of magnitude. The interface was analyzed by XPS and confirmed that Ti-O-Sn linkage was formed. After removing the Ti-O-Sn bond at the interface between TiO2 and MAPbSnI3, the efficiency drastically increased from 4.0 % to 13.8 % and the stability was improved. It was proved that interface architecture is quite important for enhancing the MAPbSnI3 solar cells.
References
1. S. Nakabayashi, et al., J. Photonics for Energy; 2015, 5, 057410. 2. Y. Ogomi, et al., J. Phys. Chem. Lett. 2014, 5, 1004-1011.
In order to examine the interface structure of TiO2/perovskite layer, quartz crystal microbalance sensor (QCM) was used. On the QCM sensor, TiO2 layer was fabricated and the PbI2 solution in Dimethylformamide (DMF) was passed on the QCM sensor to estimate the adsorption density of the PbI2 on the titania2. The amount of PbI2 adsorption on TiO2 surface increased as the adsorption time and leveled off at a certain time. PbI2 still remained even after the solvent only (DMF) was passed on the TiO2 layer on QCM (namely rinsing with DMF), suggesting that the PbI2 was tightly bonded on the TiO2 surface. The bonding structure was found to be Ti-O-Pb linkage by XPS analysis. We concluded that the Ti-OH on the surface of TiO2 reacts with I-Pb-I to form Ti-O-Pb-I and HI (Fig.1 B). The surface trap density was measured by thermally stimulated current (TSC) method. Before the PbI2 passivation, the trap density of TiO2 was 1019 cm3. The trap density decreased to 1016/cm3 after the PbI2 passivation, suggesting that the TiO2 surface trap was passivated with I-Pb-I. The passivation density was tuned by the concentration of PbI2 in DMF, by which TiO2 layer was passivated. Perovskite solar cells were fabricated on the passivated TiO2 layer with various PbI2 passivation densities by one step process (mixture of PbI2 + MAI in DMF). It was found that Jsc increased with an increase in the Ti-O-Pb density. We concluded that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and supresses charge recombination.
The effect of Cl anion on high efficiency is still controversial when perovskite layer is prepared by one step method from the mixture of MAI and PbCl2. It was found that adsorption density of PbCl2 on TiO2 surface was much higher than that of PbI2 from the experiment using QCM sensor. After the surface was washed with DMF, Cl and Pb were detected. These results suggest that the TiO2 surface was much more passivated by PbCl2 than by PbI2. This may explain partially the high efficiency when the perovskite layer was fabricated by one step process consisting of MAI and PbCl2 solution. We also observed that the crystal size increased with an increase in the amount of Cl anion which of course one of the explanation of the high efficiency.
The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines. The passivation was also effective for increasing Voc and Jsc. This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 μsec to 60 μsec.
Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using self-assembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented.
We have succeeded in harvesting energy in the NIR region by using Sn halide based perovskite materials. The cell has the following composition: F-doped SnO2 layered glass/compact titania layer/porous titania layer/Sn based perovskite material/ p-type polymer semiconductor. The edge of the incident photon to current efficiency (IPCE) edge reached 1040 nm. 4.18 % efficiency with open circuit efficiency (Voc):0.42 V, fill factor (FF): 0.5, short circuit current (Jsc): 20.04 mA/cm2 is reported.
We study light absorption in ZnO nanorod arrays sensitized with CdSe quantum dots as one of the factors affecting solar cell performance in need of improvement given their current performance well below expectations. Light trapping in nanorod arrays (NRAs) as it relates to array density and length as well as quantum dot (QD) loading is studied using the Finite Difference Time Domain model. It is shown that light absorption in such solar cell architecture is a sensitive function of the morphological dimensions and that a higher NRA density does not necessarily correspond to large absorption in the solar cell. Instead, light trapping efficiency depends significantly on the array density, QD axial distribution and refractive index contrast between NR and QDs thus suggesting strategies for improved quantum dot solar cell (QDSC) fabrication. In addition, we present experimental data showing dramatic improvement in photo conversion efficiency performance for relatively short ZnO NRAs (~1 μm) of low NRA density, but whose efficiency improvement can not be solely explained based on our current light trapping estimates from the numerical simulations.
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