Dr. Aditya Dayal Profile

Dr. Aditya Dayal

Senior Applications Engineering Manager at KLA Corp

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 5 April 2012 Paper

Paper

Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry

Kin Wai Tang, Teng Hwee Ng, Lei Huang, Susan Ng, Thomas Ku, Wee Teck Chia, Lin Chua, William Li, Aaron Chin, Aditya Dayal, Tom Vavul, Trent Hutchinson

Proceedings Volume 8324, 83242W (2012) https://doi.org/10.1117/12.916335

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Inspection, Scanners, Yield improvement, Scanning electron microscopy, Information fusion, Calibration, Transistors

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Proceedings Article | 26 May 2010 Paper

Paper

New critical dimension uniformity measurement concept based reticle inspection tool

Kangjoon Seo, MunSik Kim, Sang Chul Kim, JaeCheon Shin, ChangYeol Kim, John Miller, Aditya Dayal, Trent Hutchinson, KiHun Park

Proceedings Volume 7748, 77480N (2010) https://doi.org/10.1117/12.864109

KEYWORDS: Photomasks, Reticles, Inspection, Critical dimension metrology, Reflectivity, Semiconducting wafers, Scanning electron microscopy, Manufacturing, Data processing, Scanners

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Proceedings Article | 30 September 2009 Paper

Paper

Critical dimension uniformity using reticle inspection tool

Mark Wylie, Trent Hutchinson, Gang Pan, Thomas Vavul, John Miller, Aditya Dayal, Carl Hess, Mike Green, Shad Hedges, Dan Chalom, Maciej Rudzinski, Craig Wood, Jeff McMurran

Proceedings Volume 7488, 74881O (2009) https://doi.org/10.1117/12.830148

KEYWORDS: Photomasks, Reticles, Scanning electron microscopy, Critical dimension metrology, Inspection, Manufacturing, Etching, Error analysis, Semiconducting wafers, Binary data

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Proceedings Article | 23 September 2009 Paper

Paper

Aerial plane inspection for advanced photomask defect detection

Won Sun Kim, Jin Hyung Park, Dong Hoon Chung, Chan Uk Jeon, Han Ku Cho, Trent Hutchinson, Oscar Lee, William Huang, Aditya Dayal

Proceedings Volume 7488, 74882Q (2009) https://doi.org/10.1117/12.830139

KEYWORDS: Inspection, Photomasks, SRAF, Lithography, Defect detection, Reticles, Semiconducting wafers, Image resolution, Image processing, Wafer inspection

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Proceedings Article | 23 September 2009 Paper

Paper

SMO photomask inspection in the lithographic plane

Emily Gallagher, Karen Badger, Yutaka Kodera, Jaione Tirapu Azpiroz, Ioana Graur, Scott Halle, Kafai Lai, Gregory McIntyre, Mark Wihl, Shaoyun Chen, Ge Cong, Bo Mu, Zhian Guo, Aditya Dayal

Proceedings Volume 7488, 748807 (2009) https://doi.org/10.1117/12.830668

KEYWORDS: Photomasks, Inspection, Source mask optimization, Semiconducting wafers, Lithography, Manufacturing, Binary data, Reticles, Image processing, Image resolution

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Proceedings Article | 11 May 2009 Paper

Paper

TeraScanXR: a high sensitivity and throughput photomask inspection system

Bo Mu, Aditya Dayal, Arosha Goonesekera, Phillip Lim, Chunlin Chen, Po Liu, Kevin Yeung, Becky Pinto, Bill Broadbent, Gregg Inderhees

Proceedings Volume 7379, 73792B (2009) https://doi.org/10.1117/12.824325

KEYWORDS: Inspection, Reticles, Sensors, Databases, Photomasks, Detection and tracking algorithms, SRAF, Logic, Imaging systems, Critical dimension metrology

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Proceedings Article | 24 March 2009 Paper

Paper

Results from prototype die-to-database reticle inspection system

Bo Mu, Aditya Dayal, Bill Broadbent, Phillip Lim, Arosha Goonesekera, Chunlin Chen, Kevin Yeung, Becky Pinto

Proceedings Volume 7272, 72723O (2009) https://doi.org/10.1117/12.815574

KEYWORDS: Prototyping, Inspection, Reticles, Sensors, Detection and tracking algorithms, Imaging systems, Logic, SRAF, Signal to noise ratio, Digital breast tomosynthesis

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Proceedings Article | 17 October 2008 Paper

Paper

Results from the KLA-Tencor TeraScanXR reticle inspection tool

Aditya Dayal, Bo Mu, Venkat Iyer, Phillip Lim, Arosha Goonesekera, Bill Broadbent

Proceedings Volume 7122, 71223G (2008) https://doi.org/10.1117/12.801831

KEYWORDS: Inspection, Reticles, Line edge roughness, Signal to noise ratio, Sensors, Detection and tracking algorithms, Spatial frequencies, Modulation transfer functions, Image processing, Defect detection

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Proceedings Article | 19 May 2008 Paper

Paper

Results of new CD detection capability on advanced reticles

Arosha Goonesekera, Heiko Schmalfuss, Isaac Lee, Chun Guan, Aditya Dayal, Thomas Schulmeyer, Jan Heumann

Proceedings Volume 7028, 70282L (2008) https://doi.org/10.1117/12.793091

KEYWORDS: Inspection, Reticles, Critical dimension metrology, Sensors, Defect detection, Photomasks, Detection and tracking algorithms, Opacity, Resolution enhancement technologies, Image processing

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Proceedings Article | 19 May 2008 Paper

Paper

Thin-line de-sense capability for database mode inspections with KLA-Tencor TeraScanHR

Arosha Goonesekera, Isaac Lee, Bo Mu, Aditya Dayal

Proceedings Volume 7028, 70282J (2008) https://doi.org/10.1117/12.793089

KEYWORDS: SRAF, Inspection, Databases, Reticles, Photomasks, Optical proximity correction, Sensors, Resolution enhancement technologies, Photoresist materials, Lithography

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Proceedings Article | 19 May 2008 Paper

Paper

Printability impact of progressive defects: ammonium sulfate emulation study

Brian Grenon, Tracy Huang, Aditya Dayal, Kaustuve Bhattacharyya

Proceedings Volume 7028, 702817 (2008) https://doi.org/10.1117/12.793048

KEYWORDS: Crystals, Reticles, Magnesium, Inspection, Quartz, Air contamination, Photomasks, Crystallography, Contamination, Semiconducting wafers

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Proceedings Article | 24 March 2008 Paper

Paper

A new high-resolution photomask inspection system for contamination detection

Bo Mu, Aditya Dayal, Lih-Huah Yiin, Jinggang Zhu, John Miller, Gregg Inderhees

Proceedings Volume 6922, 69222B (2008) https://doi.org/10.1117/12.773201

KEYWORDS: Inspection, Reticles, SRAF, Photomasks, Contamination, Calibration, Algorithm development, Detection and tracking algorithms, Semiconducting wafers, Sensors

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Proceedings Article | 30 October 2007 Paper

Paper

EUV mask process development using DUV inspection system

David Kim, Venu Vellanki, William Huang, Andrew Cao, Chunlin Chen, Aditya Dayal, Paul Yu, Ki Hun Park, Yumiko Maenaka, Kazuko Jochi, Gregg Inderhees

Proceedings Volume 6730, 67305M (2007) https://doi.org/10.1117/12.747163

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Cameras, Deep ultraviolet, Lithography, Etching, Reticles, Fiber optic illuminators

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Proceedings Article | 25 October 2007 Paper

Paper

Characterizing contamination inspection capabilities using programmed defect test reticles

Anthony Nhiev, John Riddick, Joseph Straub, Trent Hutchinson, Bryan Reese, Aditya Dayal

Proceedings Volume 6730, 673028 (2007) https://doi.org/10.1117/12.746822

KEYWORDS: Inspection, Reticles, Optical spheres, Photomasks, Contamination, Manufacturing, Defect detection, Computer aided design, Light sources, Quartz

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The ORION^TM series of test reticles have been used for many years as the photomask industry standard for evaluating contamination inspection algorithms. The deposition of Polystyrene Latex (PSL) spheres on various reticle pattern designs allow STARlight^TM tool owners to measure the relative contamination inspection performance in a consistent and quantifiable manner. However, with recent inspection technology advances such as shorter laser (light source) wavelengths and smaller inspection pixels, PSL spheres were observed to physically degrade over relatively short time periods: especially for the smallest sized spheres used to characterize contamination inspection performance at the most advanced technology nodes. Investigations into using alternative materials or methods that address the issue of PSL shrinkage have not yet proven completely successful. Problems such as failure to properly adhere to reticle surfaces or identification of materials that can produce consistent and predictable sphere sizes for the reliable manufacture of these critical test masks are only some of the challenges that must be solved. Even if these and other criteria are met, the final substance must appear to inspection optics as pseudo soft defects which resemble actual contamination that inevitably appears on production reticle surfaces. In the interim, programmed pindot defects present in the quartz region of the SPICA^TM test reticle are being used to characterize contamination performance while a suitable long-term solution to address the issue of shrinking PSL spheres on ORION masks can be found. This paper examines the results of a programmed pindot test reticle specifically designed to evaluate contamination algorithms without the deposition of PSL spheres or similar structures. This alternative programmed pindot test reticle uses various background patterns similar to the ORION, however, it also includes multiple defects sizes and locations making it more desirable than the limited range of defects found on the SPICA.

Proceedings Article | 25 October 2007 Paper

Paper

Automatic optimization of MEEF-driven defect disposition for contamination inspection challenges

Tracy Huang, Aditya Dayal, Kaustuve Bhattacharyya, Joe Huang, William Chou, Yung-Feng Cheng, Shih-Ming Yen, James Cheng, Peter Peng

Proceedings Volume 6730, 67302B (2007) https://doi.org/10.1117/12.748226

KEYWORDS: Crystals, Reticles, Contamination, Inspection, Quartz, Lithography, Semiconducting wafers, Photomasks, Sensors, Defect detection

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Ever-tightened design rules and ensuing aggressive OPC features pose significant challenges for wafer fabs in the pursuit of compelling yield and productivity. The introduction of advanced reticles considerably augments the mask error enhancement factor (MEEF) where progressive defects or haze, induced by repeated laser exposure, continue to be a source of reticle degradation threatening device yield. High resolution reticle inspection now emerges as a rescue venue for wafer fabs to assure their photomask integrity during intensive deep UV exposure. Integrated in the high resolution reticle inspection, a MEEF-driven lithographic detector "Litho3" can be used run-time to group critical defects into a single bin. Previous investigations evinced that critical defects identified by such detector were directly correlated with defects printed on wafer, upon which fab users can make cogent decisions towards reticle disposition and cleaning therefore reduce cycle time. One of the challenges of implementing such detector resides in the lengthy set up of user-defined parameters, from practitioner standpoint, can considerably extend reticle inspection time and inevitably delay production. To overcome this, an automatic simulation program has been written to optimize Litho3 settings based off a pre-inspection in which only default Litho3 values are needed. Upon completion of the pre-inspection, the images are then scanned and processed to extract the optimal Litho3 parameters that are largely dependent upon the feature size characteristics and local MEEF. Thus optimized Litho3 parameters can then be input into the recipe set up to enable a real-time inspection, as such fab user can timely access the defect criticality information for subsequent defect disposition. In the interest of printability validation, such defect information and associated coordinates can be passed onto defect review via XLINK for further analysis. Corresponding MEEF values are also available for all identified critical defects. Through this automatic program the set up time for Litho3 can be reduced by up to 90%. For high capacity production fabs running a pre-inspection is deemed infeasible; this automatic optimization program can also serve as a direct interpretation of any regular reticle inspection even without invoking Litho3 set up, yet in the end provide output in the context of defect criticality. Results acquired from this program were found in good accordance with those from the real-time Litho3 inspection, for both critical and non-critical layers of 90 nm design node. Such capability allows detailed study of defect criticality in relation to its size, defect optical transmittance, residing surface, its proximity to a printing pattern as well as lithography parameters such as NA and sigma. Furthermore, coupling this automatic program with high resolution inspection also assists in determining lithography process window and an indepth comprehension of defect progression mechanism.

Proceedings Article | 29 May 2007 Paper

Paper

A novel run-time MEEF-driven defect disposition extending high resolution contamination inspection to next generation photomask

William Chou, Yung-Feng Cheng, Shih-Ming Yen, James Cheng, Peter Peng, Joe Huang, Tracy Huang, Den Wang, Ellison Chen, Ching Yun Hsiang, Kaustuve Bhattacharyya, Aditya Dayal

Proceedings Volume 6607, 66072F (2007) https://doi.org/10.1117/12.728998

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Photomasks, Lithography, Defect detection, Sensors, Contamination, Air contamination, Transmittance

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The advent of device miniaturization necessitates sub-half-micron features delineated on reticles where photomask quality, more so than ever, exerts remarkable yield impact on 65 nm node and below. The introduction of advanced reticles considerably augments the mask error enhancement factor (MEEF) in the non-linear regime ensuing aggressive OPC features. The increased MEEF leads to tightened defect capture criteria, in which many of the previously insignificant defects become of interest and may have substantial yield impact. To provide desired sensitivity, a high resolution inspection is a must; it also effectively monitors mask reliability. However, the productivity of such inspection greatly depends on defect disposition efficacy in sorting out critical defects from the large population detected on contaminated masks [1-3]. Anchoring high resolution reticle inspection, wafer fabs are in a relentless pursuit of optimal defect disposition method to meet the throughput demand. In particular, progressive defects or haze, induced by repeated laser exposure, continue to be a source of reticle degradation threatening device yield. Early detection of these defects to circumvent the printability impact becomes vitally important yet challenging. In addition to its size, the defect criticality also largely depends upon defect optical transmittance, residing surface, its proximity to a printing pattern as well as lithography parameters such as NA and sigma [4-6]. A MEEF-driven lithographic detector named "Litho3" has been designed that can be used run-time during mask inspection to effectively group the critical defects into a single bin based on their potential yield impact. The coordinates of these critical defects, identified by the above Litho3 detector, can then be transferred from reticle to wafer and subsequently subject to printability validation, upon which defective sites can be analyzed thoroughly on reticle or wafer review tools. Such capability reduces inspection cycle time by improving defect disposition efficacy, also assists in determining lithography process window and a further comprehension of defect progression mechanism.

Proceedings Article | 5 April 2007 Paper

Paper

Results from a new die-to-database reticle inspection platform

William Broadbent, Yalin Xiong, Michael Giusti, Robert Walsh, Aditya Dayal

Proceedings Volume 6518, 65182I (2007) https://doi.org/10.1117/12.712367

KEYWORDS: Reticles, Inspection, Image transmission, Databases, Imaging systems, Image processing, Data modeling, Defect detection, Optical proximity correction, Sensors

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Proceedings Article | 20 October 2006 Paper

Paper

EUV mask pattern inspection for memory mask fabrication in 45-nm node and below

Do Young Kim, Seong Yong Cho, Hun Kim, Sung Min Huh, Dong Hoon Chung, Byung Chul Cha, Jung Woo Lee, Seong Woon Choi, Woo Sung Han, Ki Hun Park, Eun Ji Kim, Zhengyu Guo, Ellen Quach, David Gee, Tom Brown, Aditya Dayal

Proceedings Volume 6349, 63492L (2006) https://doi.org/10.1117/12.686488

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, EUV optics, Extreme ultraviolet lithography, Deep ultraviolet, Reticles, Defect detection, Binary data, Current controlled current source

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Proceedings Article | 9 November 2005 Paper

Paper

Optimized inspection of advanced reticles on the TeraScan reticle inspection tool

Aditya Dayal, J.-P. Sier, Weston Sousa, Steven Labovitz

Proceedings Volume 5992, 599245 (2005) https://doi.org/10.1117/12.634078

KEYWORDS: Inspection, Reticles, Contamination, Photomasks, Image transmission, Defect detection, Databases, Digital breast tomosynthesis, Resolution enhancement technologies, Opacity

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Proceedings Article | 4 November 2005 Paper

Paper

Generating mask inspection rules for advanced lithography

Karen Badger, Bill Broadbent, Aditya Dayal, Emily Gallagher, ChingYun Hsiang, Vincent Redding

Proceedings Volume 5992, 599208 (2005) https://doi.org/10.1117/12.632478

KEYWORDS: Inspection, Photomasks, Databases, Opacity, Optical proximity correction, SRAF, Lithography, Product engineering, Reticles, Contamination

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Proceedings Article | 2 June 2003 Paper

Paper

Implementation of high-resolution reticle inspection in wafer fabs

Aditya Dayal, Nathan Bergmann, Peter Sanchez

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485029

KEYWORDS: Inspection, Reticles, Photomasks, Semiconducting wafers, Wafer inspection, Pellicles, Resolution enhancement technologies, Lithography, Defect inspection, Glasses

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Proceedings Article | 27 December 2002 Paper

Paper

Impact of EUV mask quality on optical inspection sensitivity

Donald Pettibone, Aditya Dayal, Stanley Stokowski

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467439

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Modulation, Reflectivity, Extreme ultraviolet lithography, Optical inspection, Autoregressive models, Glasses, Printing

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Proceedings Article | 16 July 2002 Paper

Paper

Contamination inspection of embedded phase-shift masks

Aditya Dayal, Peter Sanchez, Florence Eschbach, Adelina Vargas, Jun Kim

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473485

KEYWORDS: Inspection, Photomasks, Reticles, Phase shifts, Contamination, Image transmission, Defect inspection, Etching, Optical proximity correction, Calibration

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Proceedings Article | 21 August 1998 Paper

Paper

MIRAC2: a mid-infrared array camera for astronomy

William Hoffmann, Joseph Hora, Giovanni Fazio, Lynne Deutsch, Aditya Dayal

Proceedings Volume 3354, (1998) https://doi.org/10.1117/12.317327

KEYWORDS: Signal processing, Sensors, Digital signal processing, Cameras, Electrons, Field effect transistors, Telescopes, Clocks, Filtering (signal processing), Astronomy

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Showing 5 of 24 publications

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