Mr. Cheol-Kyun Kim Profile

Cheol-Kyun Kim

Principal Engineer

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 23 March 2020 Paper

SRAF printing prediction using artificial neural network

Yonghwi Kwon, Jinho Yang, Sungho Kim, Cheolkyun Kim, Youngsoo Shin

Proceedings Volume 11327, 113270C (2020) https://doi.org/10.1117/12.2550685

KEYWORDS: SRAF, Pulmonary function tests, Printing, Machine learning, Optical proximity correction, Photomasks, Artificial neural networks, Data modeling, Logic devices, Lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

OPC model accuracy study using high volume contour based gauges and deep learning on memory device

Young-Seok Kim, SeIl Lee, Zhenyu Hou, Yiqiong Zhao, Meng Liu, Yunan Zheng, Qian Zhao, Daekwon Kang, Lei Wang, Mark Simmons, Mu Feng, Jun Lang, Byoung-Il Choi, Gilbert Kim, Hakyong Sim, Jongcheon Park, Gyun Yoo, JeonKyu Lee, Sung-woo Ko, Jaeseung Choi, Cheolkyun Kim, Chanha Park

Proceedings Volume 10959, 1095913 (2019) https://doi.org/10.1117/12.2515274

KEYWORDS: Calibration, Metrology, Optical proximity correction, Data modeling, Instrument modeling, Scanning electron microscopy, Time metrology, Neural networks, Semiconducting wafers

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Proceedings Article | 16 March 2016 Paper

Advanced DFM application for automated bit-line pattern dummy

Tae Hyun Shin, Cheolkyun Kim, Hyunjo Yang, Mohamed Bahr

Proceedings Volume 9781, 978114 (2016) https://doi.org/10.1117/12.2220276

KEYWORDS: Metals, Design for manufacturing, Manufacturing, Critical dimension metrology, Shape analysis, Etching, Databases, Visualization, Design for manufacturability, Logic devices

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Proceedings Article | 15 March 2016 Paper

Simple method for decreasing wafer topography effect for implant mask

Taejun You, Taehyeong Lee, Gyun Yoo, Youngjoon Park, Cheolkyun Kim, Donggyu Yim

Proceedings Volume 9780, 97801E (2016) https://doi.org/10.1117/12.2219863

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Reflection, Optical proximity correction, Optical lithography, Dry etching, Buildings, Lithography, Image processing, Data modeling, Visualization, Scanning electron microscopy, Antireflective coatings

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Proceedings Article | 31 March 2014 Paper

Full-chip model-based OPC verification by using rigorous resist 3D model

Dongho Kong, Taejun You, Cheolkyun Kim, Hyunjo Yang, Donggyu Yim

Proceedings Volume 9052, 905220 (2014) https://doi.org/10.1117/12.2046577

KEYWORDS: Data modeling, Semiconducting wafers, 3D modeling, Etching, Chemical mechanical planarization, Scanning electron microscopy, Process modeling, Virtual reality, Wafer inspection, Calibration

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Proceedings Article | 31 March 2014 Paper

Model-based pattern dummy generation for logic devices

Jongwon Jang, Cheolkyun Kim, Sungwoo Ko, Seokyoung Byun, Hyunjo Yang, Donggyu Yim

Proceedings Volume 9052, 90521W (2014) https://doi.org/10.1117/12.2046198

KEYWORDS: SRAF, Model-based design, Metals, Instrument modeling, Lithography, Logic devices, Optical proximity correction, Shape memory alloys, Logic, Semiconducting wafers

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Proceedings Article | 20 March 2012 Paper

Characteristics analysis of RELACS process from an OPC point of view

Jinyoung Choi, Minae Yoo, Chanha Park, Changil Oh, Cheolkyun Kim, Hyunjo Yang, Donggyu Yim

Proceedings Volume 8325, 83251Z (2012) https://doi.org/10.1117/12.916121

KEYWORDS: Optical proximity correction, Image processing, Lithography, Semiconducting wafers, Photoresist processing, Standards development, Reticles, Resolution enhancement technologies, Scanning electron microscopy, Lithographic illumination

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There are strong demands for techniques which are able to extend application of ArF immersion lithography. Especially, the leading edge techniques are required to make very small hole patterns below 50nm. Several techniques such as double patterning technique, free-form illumination and resist shrinkage technology are considered as viable candidates. Most of all, NTD (Negative Tone Development) is being regarded as the most promising technology for the realization of small hole patterns When NTD process is applied, hole patterns are defined by island type features on the reticle and consequently its optical performance shows better result compared with PTD (Positive Tone Development) process. However it is still difficult to define extremely small hole patterns below 40nm, new combination process of NTD with RELACS is being introduced to overcome resolution limitation. NTD combined with RELACS, which is the most advanced lithography technology, definitely enable us to generate smaller size hole patterns on the wafer. A chemical shrinkage technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. In case of PTD combined with RELACS process, we already know that CD change after the shrinkage process is not influenced by duty ratio. So we could easily reflect the RELACS bias to meet the CD target during OPC (Optical Proximity Correction) procedure. But NTD combined with RELACS process was not understood clearly, nor verified. It requires more investigation of physical behavior during combined process in order to define exact hole patterns. The newly introduced process might require additive OPC modeling procedure to satisfy target CD when NTD RELACS bias has different values according to pitch and shape. This study is going to include the investigation on two types of resist shrinkage process, PTD and NTD. The optimized OPC methodology will be discussed through the evaluation on simple array hole patterns and random hole patterns.

Proceedings Article | 29 March 2011 Paper

Comprehensive EUV lithography model

Mark Smith, Trey Graves, John Biafore, Stewart Robertson, Cheolkyun Kim, James Moon, Jaeheon Kim, Cheolkyu Bok, Donggyu Yim

Proceedings Volume 7969, 796906 (2011) https://doi.org/10.1117/12.879766

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Data modeling, Photomasks, Calibration, Extreme ultraviolet, Point spread functions, Lithography, Photoresist materials, Stochastic processes

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Proceedings Article | 23 March 2011 Paper

Study of model-assisted rule base SRAF for random contact

James Moon, Byoung-Sub Nam, Cheol-Kyun Kim, Hyong-Sun Yun, Ji-Young Lee, Donggyu Yim, Sung-Ki Park

Proceedings Volume 7973, 79732H (2011) https://doi.org/10.1117/12.879201

KEYWORDS: SRAF, Optical proximity correction, Semiconducting wafers, Photomasks, Performance modeling, Electroluminescence, Mask making, Scanning electron microscopy, Wafer testing, Lithography

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Proceedings Article | 23 March 2011 Paper

Scanner matching using pupil intensity control between scanners in 30nm DRAM device

Jongwon Jang, Daejin Park, Jeaseung Choi, Areum Jung, Gyun Yoo, Jungchan Kim, Cheol-kyun Kim, Donggyu Yim, Junwei Lu, Seunghoon Park, Zongchang Yu, Venu Vellanki, Wenkin Shao, Chris Park

Proceedings Volume 7973, 79730S (2011) https://doi.org/10.1117/12.879570

KEYWORDS: Scanners, Critical dimension metrology, Semiconducting wafers, Cadmium, Calibration, Data modeling, Computer simulations, Metrology, Control systems, Lithography

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Proceedings Article | 10 March 2010 Paper

The impacts of scanner modeling parameters for OPC model of sub-40nm memory device

Cheol-Kyun Kim, Jong-won Jang, Jinhyuck Jeon, Chan-ha Park, Hyun-jo Yang, Donggyu Yim, Sungki Park

Proceedings Volume 7640, 764013 (2010) https://doi.org/10.1117/12.846710

KEYWORDS: Scanners, Critical dimension metrology, Optical proximity correction, Instrument modeling, Lithographic illumination, Shape analysis, Process modeling, Semiconducting wafers, Resolution enhancement technologies, Lithography

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It is necessary to apply extreme illumination condition on real device as minimum feature size of the device shrinks. As k1 decrease, ultra extreme illumination has to be used. However, in case of using this illumination, CD and process windows dramatically fluctuate as pupil shapes slightly changes. For past several years, Pupil Fit Modeling (PFM) was developed in order to analyze pupil shape parameters which are independent from each others. The first object in this work is to distinguish pupil shape of different scanner by separating more parameters. According to pupil parameter analysis, the major factors of CD or process window difference between two scanner systems obviously appear. Due to correlation between pupil parameter and scanner knob, pupil parameter analysis would be clearly identified which scanner knob should be compensated. The second object is to define specification of each parameter by using analysis of CD budget for each pupil parameters. Using periodic monitoring of pupil parameter which is controlled by previous specification, scanner system in product lines can be maintained at ideal state. Additionally, OPC model accuracy enhancement should be obtained by using highly accurate fitted pupil model. Recently, other application of pupil model is reported for improvement of OPC and model based verification model accuracy. Such as modeling using average optics and hot spot detection of scanner specific model are easily adopted by using pupil fit model. Therefore, applications of pupil fit parameter for process model are very useful for improvement of model accuracy. In our study, the quantity of model accuracy enhancement using PFM is investigated and analyzed. OPC and hotspot point detection capability results with pupil fit model would be shown. Also, in this paper, trends of CD and process window for each scanner parameter are evaluated by using pupil fit model. As of results, we were able to find which pupil parameter has influence in critical layer CD and application of this result resulted in better accuracy in detecting hotspot for model based verification.

Proceedings Article | 4 March 2010 Paper

Analysis of the impact of pupil shape variation by pupil fit modeling

Jin-hyuck Jeon, Chan-ha Park, Hyun-jo Yang, Cheol-kyun Kim, Jin-young Choi, Sang-jin Oh, Dong-gyu Yim, Sung-ki Park, Ki-yeop Park, Young-hong Min, Andre Engelen, Bart Smeets, Joerg Zimmermann

Proceedings Volume 7640, 76400Y (2010) https://doi.org/10.1117/12.846703

KEYWORDS: Scanners, Critical dimension metrology, Shape analysis, Optical proximity correction, Fiber optic illuminators, Semiconducting wafers, Lithography, Control systems, Instrument modeling, Process control

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As K1 factor for mass-production of memory devices has been decreased to almost its theoretical limit, the process window of lithography is getting much smaller and the production yield has become more sensitive to even small variations of the process in lithography. So it is necessary to control the process variations more tightly than ever. In mass-production, it is very hard to extend the production capacity if the tool-to-tool variation of scanners and/or scanner stability through time is not minimized. One of the most critical sources of variation is the illumination pupil. So it is critical to qualify the shape of pupils in scanners to control tool-to-tool variations. Traditionally, the pupil shape has been analyzed by using classical pupil parameters to define pupil shape, but these basic parameters, sometimes, cannot distinguish the tool-to-tool variations. It has been found that the pupil shape can be changed by illumination misalignment or damages in optics and theses changes can have a great effect on critical dimension (CD), pattern profile or OPC accuracy. These imaging effects are not captured by the basic pupil parameters. The correlation between CD and pupil parameters will become even more difficult with the introduction of more complex (freeform) illumination pupils. In this paper, illumination pupils were analyzed using a more sophisticated parametric pupil description (Pupil Fit Model, PFM). And the impact of pupil shape variations on CD for critical features is investigated. The tool-to-tool mismatching in gate layer of 4X memory device was demonstrated for an example. Also, we interpreted which parameter is most sensitive to CD for different applications. It was found that the more sophisticated parametric pupil description is much better compared to the traditional way of pupil control. However, our examples also show that the tool-to-tool pupil variation and pupil variation through time of a scanner can not be adequately monitored by pupil parameters only, The best pupil control strategy is a combination of pupil parameters and simulated CD using measured illumination pupils or modeled pupils.

Proceedings Article | 11 December 2009 Paper

Comparison of simulation and wafer results for shadowing and flare effect on EUV alpha demo tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byong-Ho Nam, Chang-Moon Lim, Donggyu Yim, Sung-Ki Park

Proceedings Volume 7520, 75200T (2009) https://doi.org/10.1117/12.837136

KEYWORDS: Semiconducting wafers, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Photomasks, Scanning electron microscopy, Wafer testing, Lithography, Calibration, Point spread functions

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Proceedings Article | 20 March 2009 Paper

Evaluation of shadowing and flare effect for EUV tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byoung-Ho Nam, Yoon-Suk Hyun, Suk-Kyun Kim, Chang-Moon Lim, Yong-Dae Kim, Mun-Sik Kim, Yong-Kyoo Choi, Chang-Reol Kim, Donggyu Yim

Proceedings Volume 7271, 727144 (2009) https://doi.org/10.1117/12.814364

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Photomasks, Scanning electron microscopy, Wafer testing, Silicon, Light scattering

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Proceedings Article | 16 March 2009 Paper

Novel OPC method to create sub 45nm contact hole using design based metrology

Dong-Jin Lee, Se-young Oh, Jong-cheon Park, Jin-young Choi, Jungchan Kim, Cheolkyun Kim, Donggyu Yim

Proceedings Volume 7274, 72742C (2009) https://doi.org/10.1117/12.814386

KEYWORDS: Optical proximity correction, Critical dimension metrology, Metrology, Printing, Overlay metrology, Data modeling, Photomasks, Semiconductors, Systems modeling

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Proceedings Article | 4 December 2008 Paper

Novel process proximity correction by the pattern-to-pattern matching method with DBM

Dae-Jin Park, Jinyoung Choi, Hyoungsoon Yune, Jaeseung Choi, Cheolkyun Kim, Bong-Ryoul Choi, Donggyu Yim

Proceedings Volume 7140, 71403K (2008) https://doi.org/10.1117/12.804660

KEYWORDS: Critical dimension metrology, Optical proximity correction, Transistors, Semiconducting wafers, Etching, Error analysis, Data modeling, Thermal effects, Databases, Metrology

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Proceedings Article | 19 March 2008 Paper

DFM application on dual tone sub 50nm device

Byoung-Sub Nam, James Moon, Joo-Hong Jung, Dong-Ho Kong, Se-young Oh, Cheol-Kyun Kim, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6925, 692514 (2008) https://doi.org/10.1117/12.772430

KEYWORDS: Photomasks, Design for manufacturing, Optical proximity correction, Semiconductors, Copper, Semiconducting wafers, Data modeling, Lithographic illumination, Electroluminescence, Optical lithography

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Proceedings Article | 7 March 2008 Paper

Evaluation of inverse lithography technology for 55nm-node memory device

Byung-ug Cho, Sung-woo Ko, Jae-seung Choi, Cheol-Kyun Kim, Hyun-jo Yang, DongGyu Yim, David Kim, Bob Gleason, KiHo Baik, Ying Cui, Thuc Dam, Linyong Pang

Proceedings Volume 6924, 692438 (2008) https://doi.org/10.1117/12.772515

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Manufacturing, SRAF, Scanners, Atrial fibrillation, Calibration, Optimization (mathematics), Distance measurement

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Proceedings Article | 21 March 2007 Paper

Highly accurate model-based verification using SEM image calibration method

Byung-ug Cho, Dae-jin Park, Dong-suk Chang, Jae-seung Choi, Cheol-Kyun Kim, DongGyu Yim, Ju-Byung Kim

Proceedings Volume 6521, 65210R (2007) https://doi.org/10.1117/12.712037

KEYWORDS: Scanning electron microscopy, Calibration, Optical proximity correction, Data modeling, Model-based design, Semiconducting wafers, Image processing, Bridges, Manufacturing, Optical lithography

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Proceedings Article | 21 March 2007 Paper

DFM flow by using combination between design-based metrology system and model-based verification at sub-50nm memory device

Cheol-kyun Kim, Jungchan Kim, Jaeseung Choi, Hyunjo Yang, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6521, 65210T (2007) https://doi.org/10.1117/12.711953

KEYWORDS: Design for manufacturing, Critical dimension metrology, Optical proximity correction, Scanning electron microscopy, Metrology, Systems modeling, Transistors, Semiconducting wafers, Calibration, Optical lithography

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Proceedings Article | 20 May 2006 Paper

Highly accurate modeling by using 2-dimensional calibration data set for model-based OPC verification

Cheol-kyun Kim, Jae-Seung Choi, Byung-Ho Nam, DongGyu Yim

Proceedings Volume 6283, 62830V (2006) https://doi.org/10.1117/12.681855

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Semiconducting wafers, Process modeling, Reticles, Instrument modeling, Model-based design, Image analysis, Data processing

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Proceedings Article | 14 March 2006 Paper

Highly accurate hybrid-OPC method for sub-60nm memory device

Hyoung-Soon Yune, Cheol-Kyun Kim, Yeong-Bae Ahn, Byung-Ho Nam, Donggyu Yim

Proceedings Volume 6156, 61561A (2006) https://doi.org/10.1117/12.656853

KEYWORDS: Optical proximity correction, Data modeling, Model-based design, Calibration, Photomasks, Tolerancing, Process modeling, Instrument modeling, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 14 March 2006 Paper

Considerations of model-based OPC verification for sub-70nm memory device

Cheol-Kyun Kim, Jae-Seung Choi, Byung-Ho Nam, DongGyu Yim

Proceedings Volume 6156, 61561D (2006) https://doi.org/10.1117/12.656852

KEYWORDS: Optical proximity correction, Process modeling, Semiconducting wafers, Model-based design, Instrument modeling, Critical dimension metrology, Data modeling, Tolerancing, Systems modeling, Bridges

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Proceedings Article | 8 November 2005 Paper

Hybrid ORC method for low K1 process

Byungho Nam, Jaeseung Choi, Yeongbae Ahn, Cheolkyun Kim, Hyoungsoon Yune, James Moon, Donggyu Yim, Jinwoong Kim

Proceedings Volume 5992, 59922T (2005) https://doi.org/10.1117/12.632023

KEYWORDS: Optical proximity correction, Critical dimension metrology, Data modeling, Bridges, Inspection, Semiconducting wafers, Calibration, Etching, Mathematical modeling, Photomasks

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Proceedings Article | 14 September 2001 Paper

Comparison study on mask error factor in 100-nm ArF and KrF lithography

Tae-Seung Eom, Yoon-Suk Hyun, Cheol-Kyun Kim, Cheol-Kyu Bok, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435787

KEYWORDS: Lithography, Lithographic illumination, Photomasks, Diffusion, Optical lithography, Critical dimension metrology, Semiconducting wafers, Scanners, Image processing, Lithium

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Proceedings Article | 25 June 1999 Paper

Optimization of alignment key in electron-beam lithography

Cheol-Kyun Kim, Cheol Hur, YoungSik Kim, Ki-Ho Baik

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351125

KEYWORDS: Optical alignment, Overlay metrology, Silicon, Electron beam lithography, Lithography, Beam shaping, Oxides, Electron beams, CMOS devices, Aluminum

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Showing 5 of 26 publications

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