Dr. Daniele Piumi Profile

Dr. Daniele Piumi

Director Patterning at ASM Belgium NV

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Author

Publications (10)

Proceedings Article | 1 May 2023 Presentation + Paper

Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress

A. Turnquist, N. Kofuji, J. Sebastian, Z. Liu, H. Kou, H. Fukuda, Y. Tomczak, Y. Sun, D. Piumi, D. Roest

Proceedings Volume 12499, 1249904 (2023) https://doi.org/10.1117/12.2661307

KEYWORDS: Tin, Coating stress, Etching, Plasma, Plasma etching, Surface roughness, Scanning electron microscopy, Film thickness, Line edge roughness, Deformation

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Proceedings Article | 1 May 2023 Presentation + Paper

Scaled-down deposited underlayers for EUV lithography

Mihir Gupta, Joao Antunes Afonso, Philippe Bezard, Remi Vallat, Roberto Fallica, Hyo Seon Suh, Sandip Halder, Danilo De Simone, Zecheng Liu, Fanyong Ran, Hideaki Fukuda, Yiting Sun, David De Roest, Daniele Piumi

Proceedings Volume 12498, 124980R (2023) https://doi.org/10.1117/12.2660376

KEYWORDS: Film thickness, Extreme ultraviolet lithography, Etching, Adhesion, Line width roughness, Line edge roughness, Surface roughness, Lithography, Interfaces

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Proceedings Article | 26 March 2019 Presentation + Paper

Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning

Pieter Vanelderen, Victor Blanco, Ming Mao, Yoann Tomczak, David de Roest, Nicola Kissoon, Paulina Rincon Delgadillo, Gijsbert Rispens, Guido Schiffelers, Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, Etienne de Poortere, Moyra Mc Manus, Daniele Piumi, Eric Hendrickx, Geert Vandenberghe

Proceedings Volume 10957, 109570S (2019) https://doi.org/10.1117/12.2515503

KEYWORDS: Etching, Lithography, Extreme ultraviolet lithography, Photoresist materials, Logic, Optical lithography

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Proceedings Article | 17 April 2018 Paper

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

Sophie Thibaut, Angélique Raley, Frederic Lazarrino, Ming Mao, Danilo De Simone, Daniele Piumi , Kathy Barla, Akiteru Ko, Andrew Metz, Kaushik Kumar, Peter Biolsi

Proceedings Volume 10589, 105890M (2018) https://doi.org/10.1117/12.2300355

KEYWORDS: Etching, Photoresist materials, Chemistry, Carbon, Line edge roughness, Lithography, Line width roughness, Extreme ultraviolet lithography, Scanning electron microscopy, Plasma enhanced chemical vapor deposition

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Proceedings Article | 20 March 2018 Presentation

Exploration of post-lithography smoothening methods applied to 16nm half-pitch EUV lines and spaces (Conference Presentation)

Frederic Lazzarino, Ming Mao, Sara Paolillo, Suseendharan Sakthikumar, Danilo De Simone, Alain Moussa, Nadia Vandenbroeck, Daniele Piumi, Kathy Barla

Proceedings Volume 10589, 105890A (2018) https://doi.org/10.1117/12.2302640

KEYWORDS: Optical lithography, Extreme ultraviolet, Metals, Extreme ultraviolet lithography, Scanning electron microscopy, Semiconductors, High volume manufacturing, Back end of line, Photoresist materials, Line edge roughness

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Year after year, the semiconductor industry overcomes a tremendous amount of technical challenges to satisfy Moore’s law. Through innovative device architectures, smart design, new integration and patterning concepts, better tools and new materials, the industry has successfully reached the 7nm technology node. Both design and patterning options are identified and the high volume manufacturing readiness is expected end of 2018. Today, the industry is preparing for the 5nm technology node (N5) while research centers start identifying and exploring the different patterning options for the 3nm technology node. The former targets a Metal 2 Pitch (M2P) of 32nm and a Contacted Poly Pitch (CPP) of 42nm while the latter aims for a M2P of 24nm and a CPP of 32nm. At such tight metal pitches and in view of the continuous progress in EUV tool performance, a single print EUV lithography is considered as a potential patterning option for N5 to pattern critical Back-End-Of-Line (BEOL) layers such as block, via and unidirectional metal lines. However, without the emergence of improved EUV photoresist (PR) platform that meets requirements for resolution, line edge roughness and sensitivity, we can expect a very limited available PR budget for pattern transfer (between 12nm and 30nm), an increase of defects such as bridging or line interruptions and finally a degradation of the sidewall roughness. These will contribute to the total CD variation and consume an important part of the overall Edge Placement Error (EPE) budget. Hence, actual patterning methods used to smooth and transfer down the PR pattern must be significantly improved and new solutions must be explored to enable the emergence of advanced technologies. In this work, we explore different post-lithography methods to overcome challenges related to EUV-based patterning at tight pitches. Both chemically amplified PR and metal-based PR are considered and the performance of the different approaches are evaluated step-by-step using top down SEM imaging, cross-section SEM and 3D-AFM. Finally, we complete the study showing Power Spectral Density (PSD) analysis that help to understand how the roughness is distributed in the frequency domain for the different studied methods.

Proceedings Article | 7 April 2017 Paper

Spin-on metal oxide materials for N7 and beyond patterning applications

G. Mannaert, E. Altamirano-Sanchez, T. Hopf, F. Sebaai, C. Lorant, C. Petermann, S.-E. Hong, S. Mullen, E. Wolfer, D. Mckenzie, H. Yao, D. Rahman, J.-Y. Cho, M. Padmanaban, D. Piumi

Proceedings Volume 10149, 101490T (2017) https://doi.org/10.1117/12.2264323

KEYWORDS: Etching, Metals, Optical lithography, Photomasks, Plasma, System on a chip, Oxides, Contamination, Reflectivity, Silicon

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Proceedings Article | 7 April 2017 Presentation + Paper

Self-aligned block technology: a step toward further scaling

Frédéric Lazzarino, Nihar Mohanty, Yannick Feurprier, Lior Huli, Vinh Luong, Marc Demand, Stefan Decoster, Victor Vega Gonzalez, Julien Ryckaert, Ryan Ryoung Han Kim, Arindam Mallik, Philippe Leray, Chris Wilson, Jürgen Boemmels, Kaushik Kumar, Kathleen Nafus, Anton deVilliers, Jeffrey Smith, Carlos Fonseca, Julie Bannister, Steven Scheer, Zsolt Tokei, Daniele Piumi, Kathy Barla

Proceedings Volume 10149, 1014908 (2017) https://doi.org/10.1117/12.2258028

KEYWORDS: Optical lithography, Etching, Photomasks, Double patterning technology, Extreme ultraviolet, Semiconductors, High volume manufacturing, Metals, Standards development, Lithography, Amorphous silicon, Coating, System on a chip, Materials processing, Silica, Tin

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Proceedings Article | 27 March 2017 Presentation + Paper

Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping

Ming Mao, Frederic Lazzarino, Peter De Schepper, Danilo De Simone, Daniele Piumi, Vinh Luong, Fumiko Yamashita, Michael Kocsis, Kaushik Kumar

Proceedings Volume 10146, 101460I (2017) https://doi.org/10.1117/12.2258118

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Optical lithography, Etching, Metals, Photoresist processing, Oxides, Tin, System on a chip, Plasma

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Proceedings Article | 27 March 2017 Presentation + Paper

Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist

Frederic Lazzarino, Sara Paolillo, Anthony Peter, David De Roest, TaeGeun Seong, Yizhi Wu, Stefan Decoster, Vito Rutigliani, Gian Francesco Lorusso, Vassilios Constantoudis, Sven Van Elshocht, Daniele Piumi, Kathy Barla

Proceedings Volume 10146, 101460K (2017) https://doi.org/10.1117/12.2258040

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Photoresist materials, Metals, Extreme ultraviolet, Double patterning technology, Back end of line, Semiconductors, High volume manufacturing, Line edge roughness, Chemistry, Argon, Plasma, Semiconducting wafers, Surface roughness, Line width roughness, FT-IR spectroscopy

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Proceedings Article | 23 March 2016 Paper

Patterning challenges in advanced device architectures: FinFETs to nanowires

N. Horiguchi, A. Milenin, Z. Tao, H. Hubert, E. Altamirano-Sanchez, A. Veloso, L. Witters, N. Waldron, L.-Å. Ragnarsson, M. S. Kim, Y. Kikuchi, H. Mertens, P. Raghavan, D. Piumi, N. Collaert, K. Barla, A. Thean

Proceedings Volume 9782, 978209 (2016) https://doi.org/10.1117/12.2220605

KEYWORDS: Optical lithography, Field effect transistors, Nanowires, Etching, Silicon, Metals, Isotropic etching, Dielectrics, Germanium

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Showing 5 of 10 publications

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