Mr. Takahiro Nakayama Profile

Takahiro Nakayama

at CANON INC

SPIE Involvement:

Author

Publications (11)

SPIE Journal Paper | 4 January 2022

Enabling nanoimprint simulator for quality verification: process-design co-optimization toward high-volume manufacturing

Junichi Seki, Yuichiro Oguchi, Naoki Kiyohara, Koshiro Suzuki, Kohei Nagane, Shintaro Narioka, Takahiro Nakayama, Yoshihiro Shiode, Sentaro Aihara, Toshiya Asano

JM3, Vol. 21, Issue 01, 011005, (January 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.1.011005

KEYWORDS: Nanoimprint lithography, Photoresist processing, Computer simulations, Distortion, Manufacturing, Head, Solids, Optical lithography, High volume manufacturing, Resistance

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Proceedings Article | 23 March 2020 Paper

Enabling nanoimprint simulator for quality verification; process-design co-optimization toward high volume manufacturing

Junichi Seki, Yuichiro Oguchi, Naoki Kiyohara, Koshiro Suzuki, Kohei Nagane, Shintaro Narioka, Takahiro Nakayama, Yoshihiro Shiode, Sentaro Aihara, Toshiya Asano

Proceedings Volume 11328, 113280N (2020) https://doi.org/10.1117/12.2551999

KEYWORDS: Nanoimprint lithography, Computer simulations, Photoresist processing, Manufacturing, Distortion, High volume manufacturing, Solids, Overlay metrology, Fluid dynamics

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Proceedings Article | 27 June 2019 Paper

The advantages of nanoimprint lithography for semiconductor device manufacturing

Toshiya Asano, Keita Sakai, Kiyohito Yamamoto, Hiromi Hiura, Takahiro Nakayama, Tomohiko Hayashi, Yukio Takabayashi, Takehiko Iwanaga, Douglas Resnick

Proceedings Volume 11178, 111780I (2019) https://doi.org/10.1117/12.2532522

KEYWORDS: Photomasks, Nanoimprint lithography, Semiconducting wafers, Lithography, Optical lithography, Manufacturing, Semiconductors, Line width roughness, Particles, Semiconductor manufacturing

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Imprint lithography is an effective and well known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of wide-diameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. Previous studies have demonstrated NIL resolution better than 10nm, making the technology suitable for the printing of several generations of critical memory levels with a single mask. In addition, resist is applied only where necessary, thereby eliminating material waste. Given that there are no complicated optics in the imprint system, the reduction in the cost of the tool, when combined with simple single level processing and zero waste leads to a cost model that is very compelling for semiconductor memory applications. Any new technology to be introduced into manufacturing must deliver either a performance advantage or a cost advantage. Given the risks associated with this introduction, generally a combination of both performance and cost advantage is preferred. In this paper both performance attributes and cost are discussed. NIL resolution and linewidth roughness do not have the limitations of conventional projection lithographic method. Furthermore, it is not subject to patterning restrictions that forced the industry towards one dimensional patterning. A cost example case of 20nm dense contacts is also presented. Because NIL utilized a single step patterning approach, process costs are substantially reduced relative to ArF immersion lithography. Overall, NIL currently realizes a 28% cost advantage for this case, but as mask life continues to improve, the cost advantages become much more significant.

Proceedings Article | 26 March 2019 Paper

The advantages of nanoimprint lithography for semiconductor device manufacturing

Keita Sakai, Kiyohito Yamamoto, Hiromi Hiura, Takahiro Nakayama, Toshiya Asano, Tomohiko Hayashi, Yukio Takabayashi, Takehiko Iwanaga, Douglas Resnick

Proceedings Volume 10958, 109580G (2019) https://doi.org/10.1117/12.2514925

KEYWORDS: Photomasks, Nanoimprint lithography, Semiconducting wafers, Lithography, Optical lithography, Manufacturing, Semiconductors, Line width roughness, Particles, Semiconductor manufacturing

Read Abstract +

Imprint lithography is an effective and well known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of widediameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. Previous studies have demonstrated NIL resolution better than 10nm, making the technology suitable for the printing of several generations of critical memory levels with a single mask. In addition, resist is applied only where necessary, thereby eliminating material waste. Given that there are no complicated optics in the imprint system, the reduction in the cost of the tool, when combined with simple single level processing and zero waste leads to a cost model that is very compelling for semiconductor memory applications. Any new technology to be introduced into manufacturing must deliver either a performance advantage or a cost advantage. Given the risks associated with this introduction, generally a combination of both performance and cost advantage is preferred. In this paper both performance attributes and cost are discussed. NIL resolution and linewidth roughness do not have the limitations of conventional projection lithographic method. Furthermore, it is not subject to patterning restrictions that forced the industry towards one dimensional patterning. A cost example case of 20nm dense contacts is also presented. Because NIL utilized a single step patterning approach, process costs are substantially reduced relative to ArF immersion lithography. Overall, NIL currently realizes a 28% cost advantage for this case, but as mask life continues to improve, the cost advantages become much more significant.

Proceedings Article | 13 July 2017 Paper

Improved particle control for high volume semiconductor manufacturing for nanoimprint lithography

Masami Yonekawa, Takahiro Nakayama, Kazuki Nakagawa, Toshihiro Maeda, Yoichi Matsuoka, Keiji Emoto, Hisanobu Azuma, Yukio Takabayashi, Ali Aghili, Makoto Mizuno, Jin Choi, Chris Jones

Proceedings Volume 10454, 104540R (2017) https://doi.org/10.1117/12.2279365

KEYWORDS: Semiconducting wafers, Curtains, Polishing, Lithography, Liquids, Ceramics, Nanoimprint lithography, Particles, Control systems, Semiconductor manufacturing, Photomasks

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Proceedings Article | 21 March 2017 Paper

Improved defectivity and particle control for nanoimprint lithography high-volume semiconductor manufacturing

Takahiro Nakayama, Masami Yonekawa, Yoichi Matsuoka, Hisanobu Azuma, Yukio Takabayashi, Ali Aghili, Makoto Mizuno, Jin Choi, Chris Jones

Proceedings Volume 10144, 1014407 (2017) https://doi.org/10.1117/12.2257647

KEYWORDS: Photomasks, Particles, Nanoimprint lithography, Lithography, Semiconductors, Control systems, Semiconductor manufacturing, Ultraviolet radiation, Optical lithography, Semiconducting wafers, Curtains, Ceramics, Surface finishing, Polishing

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Proceedings Article | 4 October 2016 Paper

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

Yoichi Matsuoka, Junichi Seki, Takahiro Nakayama, Kazuki Nakagawa, Hisanobu Azuma, Kiyohito Yamamoto, Chiaki Sato, Fumio Sakai, Yukio Takabayashi, Ali Aghili, Makoto Mizuno, Jin Choi, Chris Jones

Proceedings Volume 9985, 99851G (2016) https://doi.org/10.1117/12.2243114

KEYWORDS: Photomasks, Lithography, Nanoimprint lithography, Semiconducting wafers, Semiconductors, Particles, Semiconductor manufacturing, Curtains, Image resolution, Manufacturing

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Proceedings Article | 28 March 2014 Paper

Investigation of the resist outgassing and hydrocarbonaceous contamination induced in multi-electron-beam lithography tools

A.-P. Mebiene-Engohang, M. Pourteau, J. Marusic, L. Pain, T. Nakayama, A. Miyake, M. Smits, S. David, S. Labau, J. Boussey

Proceedings Volume 9049, 90492Q (2014) https://doi.org/10.1117/12.2046350

KEYWORDS: Contamination, Semiconducting wafers, Silicon, Thin film coatings, Scanning electron microscopy, Polymers, Carbon, Projection systems, Chemical species, Lithography

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Proceedings Article | 18 March 2009 Paper

Analysis of carbon deposition on multilayer mirrors by using two different beamlines

Takahiro Nakayama, Akira Miyake, Hiromitsu Takase, Shigeru Terashima, Takashi Sudo, Yutaka Watanabe, Yasuaki Fukuda

Proceedings Volume 7271, 72713P (2009) https://doi.org/10.1117/12.813587

KEYWORDS: Carbon, Extreme ultraviolet, Protactinium, Mirrors, Molecules, Adsorption, Extreme ultraviolet lithography, Synchrotron radiation, Information operations, Data modeling

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Proceedings Article | 21 March 2008 Paper

Phenomenological analysis of carbon deposition rate on the multilayer mirror

Takahiro Nakayama, Hiromitsu Takase, Shigeru Terashima, Takashi Sudo, Yutaka Watanabe, Yasuaki Fukuda, Katsuhiko Murakami, Shintaro Kawata, Takashi Aoki, Shuichi Matsunari, Yukinobu Kakutani, Masahito Niibe

Proceedings Volume 6921, 69213B (2008) https://doi.org/10.1117/12.769958

KEYWORDS: Carbon, Extreme ultraviolet, Mirrors, Protactinium, Extreme ultraviolet lithography, Multilayers, Bioalcohols, Chemical species, Coating, Oxidation

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Proceedings Article | 21 March 2008 Paper

Protection from surface oxidation of Ru capping layers for EUVL projection optics mirrors by introducing hydrocarbon gas

Keigo Koida, Masahito Niibe, Yukinobu Kakutani, Shuichi Matsunari, Takashi Aoki, Shigeru Terashima, Takahiro Nakayama, Hiromitsu Takase, Yasuaki Fukuda

Proceedings Volume 6921, 69213C (2008) https://doi.org/10.1117/12.771814

KEYWORDS: Mirrors, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Bioalcohols, Carbon, Oxides, Protactinium, Oxygen, Oxidation

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Showing 5 of 11 publications

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